Hall effect in organic single-crystal field-effect transistors

Jun Takeya, Koichi Yamada, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Taishi Takenobu, Yoshihiro Iwasa

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We report Hall effect of charge carriers accumulated in organic field-effect transistors. Rubrene (C42H28) single crystals are shaped for the Hall-bar configuration so that the Hall signal is appropriately detected in external magnetic fields. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The observation of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system. Moreover, the direct access to the density of mobile charge carriers provides a tool to understand nontrivial features of organic field-effect transistors such as gate electric field dependent mobility.

Original languageEnglish
Title of host publicationConjugated Organic Materials
Subtitle of host publicationSynthesis, Structure, Device, and Applications
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558998942, 9781558998940
Publication statusPublished - 2006
Externally publishedYes
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2006 Apr 182006 Apr 20

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2006 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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