TY - JOUR
T1 - Hall effect in single crystal CeCu2Si2 under high pressure
AU - Araki, S.
AU - Shiroyama, Y.
AU - Shinohara, T.
AU - Ito, Y.
AU - Ikeda, Y.
AU - Kobayashi, T. C.
AU - Seiro, S.
AU - Geibel, C.
AU - Steglich, F.
PY - 2012
Y1 - 2012
N2 - Hall effect measurements were carried out under high pressures up to 4.9 GPa in a single crystal of CeCu2Si2. The temperature dependence of the Hall coefficient is interpreted to be composed of two peaks below room temperature. The high-temperature peak shows strong pressure dependence, where the peak shifts from 20 K at ambient pressure to 125 K at 4.9 GPa. This peak is a consequence of the anomalous Hall effect due to skew scattering. The low-temperature peak shifts from 5 K at ambient pressure to 15 K at 4.9 GPa and the magnitude of the peak shows the maximum around 4.1 GPa at which the superconducting transition temperature also reaches the maximum.
AB - Hall effect measurements were carried out under high pressures up to 4.9 GPa in a single crystal of CeCu2Si2. The temperature dependence of the Hall coefficient is interpreted to be composed of two peaks below room temperature. The high-temperature peak shows strong pressure dependence, where the peak shifts from 20 K at ambient pressure to 125 K at 4.9 GPa. This peak is a consequence of the anomalous Hall effect due to skew scattering. The low-temperature peak shifts from 5 K at ambient pressure to 15 K at 4.9 GPa and the magnitude of the peak shows the maximum around 4.1 GPa at which the superconducting transition temperature also reaches the maximum.
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U2 - 10.1088/1742-6596/391/1/012005
DO - 10.1088/1742-6596/391/1/012005
M3 - Conference article
AN - SCOPUS:84874861674
SN - 1742-6588
VL - 391
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012005
T2 - International Conference on Strongly Correlated Electron Systems, SCES 2011
Y2 - 29 August 2011 through 3 September 2011
ER -