We review our recent work on the spin and anomalous Hall effects and other related phenomena caused by the intrinsic spin-orbit interaction. We focus our attention on disorder effects on these transport properties by adopting a model of a two-dimensional electron gas with a Rashba-type spin-orbit interaction. A spin-polarized model is adopted to calculate the anomalous Hall effect and anisotropic magnetoresistance. It is shown that the spin Hall conductivity in the ballistic transport regime is cancelled by the so-called vertex corrections for the disorder scattering, and that the anomalous Hall conductivity and anisotropic magnetoresistance vanish unless the lifetime is spin dependent. We further present results on spin accumulation under an electric field.
|Journal||Semiconductor Science and Technology|
|Publication status||Published - 2009 Jun 10|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry