TY - GEN
T1 - Heated ion implantation technology for highly reliable metal-gate/high-k CMOS SOI FinFETs
AU - Mizubayashi, W.
AU - Onoda, H.
AU - Nakashima, Y.
AU - Ishikawa, Y.
AU - Matsukawa, T.
AU - Endo, K.
AU - Liu, Y. X.
AU - O'Uchi, S.
AU - Tsukada, J.
AU - Yamauchi, H.
AU - Migita, S.
AU - Morita, Y.
AU - Ota, H.
AU - Masahara, M.
PY - 2013
Y1 - 2013
N2 - The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and reliability has been thoroughly investigated. It was demonstrated that heated I/I brings perfect crystallization after annealing even in ultrathin Si channel. For the first time, it was found that heated I/I dramatically improves the characteristics such as Ion-Ioff, Vth variability, and bias temperature instability (BTI) for both nMOS and pMOS FinFETs in comparison with conventional room temperature I/I.
AB - The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and reliability has been thoroughly investigated. It was demonstrated that heated I/I brings perfect crystallization after annealing even in ultrathin Si channel. For the first time, it was found that heated I/I dramatically improves the characteristics such as Ion-Ioff, Vth variability, and bias temperature instability (BTI) for both nMOS and pMOS FinFETs in comparison with conventional room temperature I/I.
UR - http://www.scopus.com/inward/record.url?scp=84894360192&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894360192&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2013.6724670
DO - 10.1109/IEDM.2013.6724670
M3 - Conference contribution
AN - SCOPUS:84894360192
SN - 9781479923076
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 20.5.1-20.5.4
BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013
T2 - 2013 IEEE International Electron Devices Meeting, IEDM 2013
Y2 - 9 December 2013 through 11 December 2013
ER -