TY - JOUR
T1 - Helicon-wave-excited-plasma sputtering as an expandable epitaxy method for planar semiconductor thin films
AU - Amaike, Hiroaki
AU - Hazu, Kouji
AU - Sawai, Yutaka
AU - Chichibu, Shigefusa
PY - 2009/10/1
Y1 - 2009/10/1
N2 - The helicon-wave-excited-plasma sputtering epitaxy (HWPSE) method was exemplified to grow atomically-smooth semiconductor epilayers of good structural and optical qualities. For a case study, ZnO homoepitaxy was carried out. According to the surface damagefree nature, the Zn-polar ZnO epilayers grown above 950 -C exhibited a smooth surface morphology with 0.26-nm-high monolayer atomic steps, of which tilt and twist mosaics were comparable to those of the substrate. Their room temperature photoluminescence (PL) spectrum was dominated by the free-excitonic emission. Clearly split PL peaks originating from A-exciton polaritons and sharp peaks due to the first excited-state excitons were observed at low temperature
AB - The helicon-wave-excited-plasma sputtering epitaxy (HWPSE) method was exemplified to grow atomically-smooth semiconductor epilayers of good structural and optical qualities. For a case study, ZnO homoepitaxy was carried out. According to the surface damagefree nature, the Zn-polar ZnO epilayers grown above 950 -C exhibited a smooth surface morphology with 0.26-nm-high monolayer atomic steps, of which tilt and twist mosaics were comparable to those of the substrate. Their room temperature photoluminescence (PL) spectrum was dominated by the free-excitonic emission. Clearly split PL peaks originating from A-exciton polaritons and sharp peaks due to the first excited-state excitons were observed at low temperature
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U2 - 10.1143/APEX.2.105503
DO - 10.1143/APEX.2.105503
M3 - Article
AN - SCOPUS:70350532914
SN - 1882-0778
VL - 2
JO - Applied Physics Express
JF - Applied Physics Express
IS - 10
M1 - 105503
ER -