Helicon-wave-excited plasma sputtering deposition of CuAlO2 thin films

Satoru Takahata, Takashi Imao, Hisayuki Nakanishi, Mutsumi Sugiyama, Shigefusa F. Chichibu

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


Helicon-wave-excited plasma sputtering (HWPS) method was used to deposit CuAlO2 films on (0001) Al2O3 substrates at 700-800 ° C for the first time. For the films deposited at 700 ° C, the best full-width at half-maximum (FWHM) value of the (006) CuAlO2 X-ray diffraction peak was 0.19 degrees, which was smaller than those reported previously using other deposition methods. The HWPS method was shown to have technical importance in developing p-type TCO films, as it seldom damage the film surface.

Original languageEnglish
Pages (from-to)3101-3103
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number9
Publication statusPublished - 2008
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18


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