Helicon-wave-excited plasma sputtering deposition of Ga-doped ZnO transparent conducting films

Mutsumi Sugiyama, Akira Murayama, Takashi Imao, Keita Saiki, Hisayuki Nakanishi, Shigefusa F. Chichibu

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Sputtering deposition of Ga-doped ZnO (ZnO: Ga) thin films was carried out using the helicon-waveexcited plasma sputtering (HWPS) method. The films sputtered above 150°C had a preferential {0001} orientation. According to the surface-damage-free nature, the films having featureless surface morphology exhibited an optical transmittance greater than 80% in the visible spectral wavelengths. However, because the deposition temperature was limited to 250°C, the electron mobility was limited to as low as 2-3 cm 2/V s due to the small grain size (∼25 nm). The results indicate that ZnO:Ga films deposited by HWPS can be used in the transparent conducting oxide layer, provided that higher electron mobility is achieved.

Original languageEnglish
Pages (from-to)2882-2886
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number11
DOIs
Publication statusPublished - 2006 Sept

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