Helicon-wave-excited plasma sputtering epitaxy of Nb-doped TiO2 films on GaN

A. Fouda, K. Hazu, T. Nakayama, A. Tanaka, S. F. Chichibu

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3 Citations (Scopus)


Rutile- and anatase-phase Nb-doped TiO2 (TiO2:Nb) epilayers were selectively grown on a GaN template by the helicon-wave-excited-plasma sputtering epitaxy (HWPSE) method. The rutile (100) TiO2:Nb films grew on the etched clean (0001) GaN surface with the in-plane epitaxial relationship [010] TiO2 // [10-10] GaN, regardless of growth temperature. While, the anatase (001) TiO2:Nb films grew on appropriately oxidized (0001) GaN with the in-plane relations [110] TiO2 // [10-10] GaN (and [110] TiO2 // [11-20] GaN) under high temperature and low oxygen partial pressure conditions. The lowest resistivity of the heterostructure was 3×10-4 Ω·cm. The selective growth of anatase films is assigned as being due to the formation of a sheet of Ga-O layer, possibly (001) or (100) orientation β-Ga2O3, on the GaN surface.

Original languageEnglish
Pages (from-to)534-536
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number2
Publication statusPublished - 2011 Feb


  • Anatase TiO
  • Epitaxy
  • Helicon-wave
  • Sputtering
  • Titanium dioxide


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