Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates

S. F. Chichibu, T. Yoshida, T. Onuma, H. Nakanishi

Research output: Contribution to journalArticlepeer-review

76 Citations (Scopus)


A promising approach to obtain epitaxial films of oxide semiconductors was demonstrated, namely helicon-wave-excited-plasma sputtering epitaxy. Due to the surface-damage-free nature, completely a-axis-locked c(0001)-orientation ZnO epilayers were successfully grown on sapphire (0001) substrates having ultrasmooth surfaces with atomic steps. The ZnO epilayer exhibited a dominant near-band-edge photoluminescence (PL) peak at 300 K. Since the PL was considered to be due to the recombination of excitons bound to an impurity or a defect and certain tilting and twisting of the films were observed when Ar/O2 were used as sputtering gases, purification and optimization of the overall process are necessary to obtain improved epilayer qualities.

Original languageEnglish
Pages (from-to)874-877
Number of pages4
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 2002 Jan 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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