Hetero-epitaxial growth of ZnO film by temperature-modulated metalorganic chemical vapor deposition

Eiji Fujimoto; Masatomo Sumiya; Tsuyoshi Ohnishi; Kenji Watanabe; Mikk Lippmaa; Yuji Matsumoto; Hideomi Koinuma

doi:10.1143/APEX.2.045502

Hetero-epitaxial growth of ZnO film by temperature-modulated metalorganic chemical vapor deposition

Eiji Fujimoto, Masatomo Sumiya, Tsuyoshi Ohnishi, Kenji Watanabe, Mikk Lippmaa, Yuji Matsumoto, Hideomi Koinuma

ENG - Applied Chemistry

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

ZnO films were fabricated by metalorganic chemical vapor deposition while a laser substrate heating system was used to rapidly cycle the sample temperature. When a hydrogen gas atmosphere was used together with the temperature modulation, ZnO films deposited from diethyl-zinc and oxygen exhibited oxygen-face polarity and a smooth surface. The quality of ZnO films was good enough to observe phonon replicas corresponding to the transition from donor-bound to free exciten in the temperature dependence of photoluminescence. The growth of ZnO film is discussed in relation to the combined effect of growth temperature modulation and the hydrogen atmosphere.

Original language	English
Pages (from-to)	455021-455023
Number of pages	3
Journal	Applied Physics Express
Volume	2
Issue number	4
DOIs	https://doi.org/10.1143/APEX.2.045502
Publication status	Published - 2009 Apr

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abstract = "ZnO films were fabricated by metalorganic chemical vapor deposition while a laser substrate heating system was used to rapidly cycle the sample temperature. When a hydrogen gas atmosphere was used together with the temperature modulation, ZnO films deposited from diethyl-zinc and oxygen exhibited oxygen-face polarity and a smooth surface. The quality of ZnO films was good enough to observe phonon replicas corresponding to the transition from donor-bound to free exciten in the temperature dependence of photoluminescence. The growth of ZnO film is discussed in relation to the combined effect of growth temperature modulation and the hydrogen atmosphere.",

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AU - Fujimoto, Eiji

AU - Sumiya, Masatomo

AU - Ohnishi, Tsuyoshi

AU - Watanabe, Kenji

AU - Lippmaa, Mikk

AU - Matsumoto, Yuji

AU - Koinuma, Hideomi

PY - 2009/4

Y1 - 2009/4

N2 - ZnO films were fabricated by metalorganic chemical vapor deposition while a laser substrate heating system was used to rapidly cycle the sample temperature. When a hydrogen gas atmosphere was used together with the temperature modulation, ZnO films deposited from diethyl-zinc and oxygen exhibited oxygen-face polarity and a smooth surface. The quality of ZnO films was good enough to observe phonon replicas corresponding to the transition from donor-bound to free exciten in the temperature dependence of photoluminescence. The growth of ZnO film is discussed in relation to the combined effect of growth temperature modulation and the hydrogen atmosphere.

AB - ZnO films were fabricated by metalorganic chemical vapor deposition while a laser substrate heating system was used to rapidly cycle the sample temperature. When a hydrogen gas atmosphere was used together with the temperature modulation, ZnO films deposited from diethyl-zinc and oxygen exhibited oxygen-face polarity and a smooth surface. The quality of ZnO films was good enough to observe phonon replicas corresponding to the transition from donor-bound to free exciten in the temperature dependence of photoluminescence. The growth of ZnO film is discussed in relation to the combined effect of growth temperature modulation and the hydrogen atmosphere.

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Hetero-epitaxial growth of ZnO film by temperature-modulated metalorganic chemical vapor deposition

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