Hetero-interface-trap generation due to hot carriers in SiGe/Si-hetero-MOSFETs

Toshiaki Tsuchiya, M. Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review


It is reported for the first time that hot-carrier-induced degradation occurs in a SiGe/Si heterostructure introduced into the channel region of SiGe/Si-hetero-MOSFETs, using a newly established elaborate low-temperature charge pumping (LTCP) technique. Moreover, the hetero-interface trap density generated and the width of the degraded region are estimated from the LTCP characteristics, These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.

Original languageEnglish
Pages (from-to)6+1101-1106
JournalIEEJ Transactions on Electronics, Information and Systems
Issue number9
Publication statusPublished - 2006


  • Charge pumping technique
  • Hetero-interface trap
  • Hot carrier
  • SiGe

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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