TY - JOUR
T1 - Hetero-interface-trap generation due to hot carriers in SiGe/Si-hetero-MOSFETs
AU - Tsuchiya, Toshiaki
AU - Sakuraba, M.
AU - Murota, Junichi
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - It is reported for the first time that hot-carrier-induced degradation occurs in a SiGe/Si heterostructure introduced into the channel region of SiGe/Si-hetero-MOSFETs, using a newly established elaborate low-temperature charge pumping (LTCP) technique. Moreover, the hetero-interface trap density generated and the width of the degraded region are estimated from the LTCP characteristics, These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.
AB - It is reported for the first time that hot-carrier-induced degradation occurs in a SiGe/Si heterostructure introduced into the channel region of SiGe/Si-hetero-MOSFETs, using a newly established elaborate low-temperature charge pumping (LTCP) technique. Moreover, the hetero-interface trap density generated and the width of the degraded region are estimated from the LTCP characteristics, These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.
KW - Charge pumping technique
KW - Hetero-interface trap
KW - Hot carrier
KW - MOSFET
KW - SiGe
UR - http://www.scopus.com/inward/record.url?scp=33748551320&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33748551320&partnerID=8YFLogxK
U2 - 10.1541/ieejeiss.126.1101
DO - 10.1541/ieejeiss.126.1101
M3 - Article
AN - SCOPUS:33748551320
SN - 0385-4221
VL - 126
SP - 6+1101-1106
JO - IEEJ Transactions on Electronics, Information and Systems
JF - IEEJ Transactions on Electronics, Information and Systems
IS - 9
ER -