Heteroepitaxial growth of perovskite CaTaO2N thin films by nitrogen plasma-assisted pulsed laser deposition

Daichi Oka; Yasushi Hirose; Tomoteru Fukumura; Tetsuya Hasegawa

doi:10.1021/cg401176j

Heteroepitaxial growth of perovskite CaTaO₂N thin films by nitrogen plasma-assisted pulsed laser deposition

Daichi Oka, Yasushi Hirose, Tomoteru Fukumura, Tetsuya Hasegawa

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We demonstrated heteroepitaxial growth of perovskite CaTaO₂N on SrTiO₃ (100) substrates by using nitrogen plasma assisted pulsed laser deposition (NPA-PLD). The CaTaO₂N films grew coherently on SrTiO₃ substrates, showing a layer-by-layer growth mode in the initial stages. The obtained films possessed high crystallinity, a sharp film/substrate interface, and flat surfaces. Impedance measurements revealed that CaTaO₂N has a much smaller dielectric constant than those of SrTaO₂N or BaTaO₂N. These results indicate that heteroepitaxial growth by NPA-PLD is a promising approach for preparing high-quality perovskite oxynitride single crystals, which are desirable for investigation of electrical properties of perovskite oxynitrides.

Original language	English
Pages (from-to)	87-90
Number of pages	4
Journal	Crystal Growth and Design
Volume	14
Issue number	1
DOIs	https://doi.org/10.1021/cg401176j
Publication status	Published - 2014 Jan 2
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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abstract = "We demonstrated heteroepitaxial growth of perovskite CaTaO2N on SrTiO3 (100) substrates by using nitrogen plasma assisted pulsed laser deposition (NPA-PLD). The CaTaO2N films grew coherently on SrTiO3 substrates, showing a layer-by-layer growth mode in the initial stages. The obtained films possessed high crystallinity, a sharp film/substrate interface, and flat surfaces. Impedance measurements revealed that CaTaO2N has a much smaller dielectric constant than those of SrTaO2N or BaTaO2N. These results indicate that heteroepitaxial growth by NPA-PLD is a promising approach for preparing high-quality perovskite oxynitride single crystals, which are desirable for investigation of electrical properties of perovskite oxynitrides.",

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T1 - Heteroepitaxial growth of perovskite CaTaO2N thin films by nitrogen plasma-assisted pulsed laser deposition

AU - Oka, Daichi

AU - Hirose, Yasushi

AU - Fukumura, Tomoteru

AU - Hasegawa, Tetsuya

PY - 2014/1/2

Y1 - 2014/1/2

N2 - We demonstrated heteroepitaxial growth of perovskite CaTaO2N on SrTiO3 (100) substrates by using nitrogen plasma assisted pulsed laser deposition (NPA-PLD). The CaTaO2N films grew coherently on SrTiO3 substrates, showing a layer-by-layer growth mode in the initial stages. The obtained films possessed high crystallinity, a sharp film/substrate interface, and flat surfaces. Impedance measurements revealed that CaTaO2N has a much smaller dielectric constant than those of SrTaO2N or BaTaO2N. These results indicate that heteroepitaxial growth by NPA-PLD is a promising approach for preparing high-quality perovskite oxynitride single crystals, which are desirable for investigation of electrical properties of perovskite oxynitrides.

AB - We demonstrated heteroepitaxial growth of perovskite CaTaO2N on SrTiO3 (100) substrates by using nitrogen plasma assisted pulsed laser deposition (NPA-PLD). The CaTaO2N films grew coherently on SrTiO3 substrates, showing a layer-by-layer growth mode in the initial stages. The obtained films possessed high crystallinity, a sharp film/substrate interface, and flat surfaces. Impedance measurements revealed that CaTaO2N has a much smaller dielectric constant than those of SrTaO2N or BaTaO2N. These results indicate that heteroepitaxial growth by NPA-PLD is a promising approach for preparing high-quality perovskite oxynitride single crystals, which are desirable for investigation of electrical properties of perovskite oxynitrides.

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Heteroepitaxial growth of perovskite CaTaO₂N thin films by nitrogen plasma-assisted pulsed laser deposition

Abstract

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