High-quality interface between an insulator and ZnO as a wide-band-gap semiconductor should realize devices based on field-effect carrier modulation or superlattices having large band offset over 1 eV. We demonstrate that LiGaO 2 could be a possible candidate for this purpose. Heteroepitaxy of LiGaO 2 is demonstrated on ZnO films, giving atomically sharp interface and fairly good exciton-related optical properties in the ZnO under layer. Although slight distortion of a basal-plane hexagon with a lattice mismatch of about 3% in LiGaO 2 gives multidomain epitaxial structure with relaxed lattices, a possible solution is proposed to realize coherent heterointerface.
|Number of pages||3|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2002 Nov 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)