Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2cleaning

Shoya Fukumoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Masanori Hayase, Eiji Higurashi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A diamond (111) substrate cleaned with an NH3/H2O2 mixture could form low-temperature direct bonding under atmospheric conditions. When the diamond surface was bonded with a plasma activated SiO2 surface at 200 °C, the bonding strength was sufficiently high so that cleavage within diamond occurred in a shear test. Moreover, the diamond and Si substrates treated with the NH3/H2O2 mixture could form atomic bonds with a 2.5-nm-thick oxide intermediate layer. This bonding method can be applied to electronic devices using diamond because heterogeneous integration can be achieved using a popular wafer cleaning process followed by low-temperature annealing.

Original languageEnglish
Article number201601
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 2020 Nov 16
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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