Heterogeneous integration technology for MEMS-LSI multi-chip module

K. W. Lee; S. Kanno; Y. Ohara; K. Kiyoyama; J. C. Bea; T. Fukushima; T. Tanaka; M. Koyanagi

doi:10.1109/3DIC.2009.5306599

Heterogeneous integration technology for MEMS-LSI multi-chip module

K. W. Lee, S. Kanno, Y. Ohara, K. Kiyoyama, J. C. Bea, T. Fukushima, T. Tanaka, M. Koyanagi

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

We developed novel interconnection technology for heterogeneous integration of MEMS and LSI multi-chip module, in which MEMS and LSI chips would be horizontally integrated on substrate and vertically stacked each others. The cavity chip composed of deep Cu TSV-beam lead wires was developed for interconnecting MEMS chips with high step height of more than 100um. Fundamental characteristics were successfully obtained from pressure sensing MEMS chip with 360μm thickness, which was connected to the substrate by the cavity chip. MEMS and LSI chips were vertically integrated by using the cavity chip without changes of chip design and extra processes. This interconnection technology can give strong solution for heterogeneous integration of MEMS and LSI chips multi-chip module.

Original language	English
Title of host publication	2009 IEEE International Conference on 3D System Integration, 3DIC 2009
DOIs	https://doi.org/10.1109/3DIC.2009.5306599
Publication status	Published - 2009
Event	2009 IEEE International Conference on 3D System Integration, 3DIC 2009 - San Francisco, CA, United States Duration: 2009 Sept 28 → 2009 Sept 30

Publication series

Name	2009 IEEE International Conference on 3D System Integration, 3DIC 2009

Conference

Conference	2009 IEEE International Conference on 3D System Integration, 3DIC 2009
Country/Territory	United States
City	San Francisco, CA
Period	09/9/28 → 09/9/30

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10.1109/3DIC.2009.5306599

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Lee, K. W., Kanno, S., Ohara, Y., Kiyoyama, K., Bea, J. C., Fukushima, T., Tanaka, T., & Koyanagi, M. (2009). Heterogeneous integration technology for MEMS-LSI multi-chip module. In 2009 IEEE International Conference on 3D System Integration, 3DIC 2009 Article 5306599 (2009 IEEE International Conference on 3D System Integration, 3DIC 2009). https://doi.org/10.1109/3DIC.2009.5306599

@inproceedings{da9b9c2603b940699c4f19486e48755d,

title = "Heterogeneous integration technology for MEMS-LSI multi-chip module",

abstract = "We developed novel interconnection technology for heterogeneous integration of MEMS and LSI multi-chip module, in which MEMS and LSI chips would be horizontally integrated on substrate and vertically stacked each others. The cavity chip composed of deep Cu TSV-beam lead wires was developed for interconnecting MEMS chips with high step height of more than 100um. Fundamental characteristics were successfully obtained from pressure sensing MEMS chip with 360μm thickness, which was connected to the substrate by the cavity chip. MEMS and LSI chips were vertically integrated by using the cavity chip without changes of chip design and extra processes. This interconnection technology can give strong solution for heterogeneous integration of MEMS and LSI chips multi-chip module.",

author = "Lee, {K. W.} and S. Kanno and Y. Ohara and K. Kiyoyama and Bea, {J. C.} and T. Fukushima and T. Tanaka and M. Koyanagi",

year = "2009",

doi = "10.1109/3DIC.2009.5306599",

language = "English",

isbn = "9781424445127",

series = "2009 IEEE International Conference on 3D System Integration, 3DIC 2009",

booktitle = "2009 IEEE International Conference on 3D System Integration, 3DIC 2009",

note = "2009 IEEE International Conference on 3D System Integration, 3DIC 2009 ; Conference date: 28-09-2009 Through 30-09-2009",

}

Lee, KW, Kanno, S, Ohara, Y, Kiyoyama, K, Bea, JC, Fukushima, T , Tanaka, T & Koyanagi, M 2009, Heterogeneous integration technology for MEMS-LSI multi-chip module. in 2009 IEEE International Conference on 3D System Integration, 3DIC 2009., 5306599, 2009 IEEE International Conference on 3D System Integration, 3DIC 2009, 2009 IEEE International Conference on 3D System Integration, 3DIC 2009, San Francisco, CA, United States, 09/9/28. https://doi.org/10.1109/3DIC.2009.5306599

Heterogeneous integration technology for MEMS-LSI multi-chip module. / Lee, K. W.; Kanno, S.; Ohara, Y. et al.
2009 IEEE International Conference on 3D System Integration, 3DIC 2009. 2009. 5306599 (2009 IEEE International Conference on 3D System Integration, 3DIC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Heterogeneous integration technology for MEMS-LSI multi-chip module

AU - Lee, K. W.

AU - Kanno, S.

AU - Ohara, Y.

AU - Kiyoyama, K.

AU - Bea, J. C.

AU - Fukushima, T.

AU - Tanaka, T.

AU - Koyanagi, M.

PY - 2009

Y1 - 2009

N2 - We developed novel interconnection technology for heterogeneous integration of MEMS and LSI multi-chip module, in which MEMS and LSI chips would be horizontally integrated on substrate and vertically stacked each others. The cavity chip composed of deep Cu TSV-beam lead wires was developed for interconnecting MEMS chips with high step height of more than 100um. Fundamental characteristics were successfully obtained from pressure sensing MEMS chip with 360μm thickness, which was connected to the substrate by the cavity chip. MEMS and LSI chips were vertically integrated by using the cavity chip without changes of chip design and extra processes. This interconnection technology can give strong solution for heterogeneous integration of MEMS and LSI chips multi-chip module.

AB - We developed novel interconnection technology for heterogeneous integration of MEMS and LSI multi-chip module, in which MEMS and LSI chips would be horizontally integrated on substrate and vertically stacked each others. The cavity chip composed of deep Cu TSV-beam lead wires was developed for interconnecting MEMS chips with high step height of more than 100um. Fundamental characteristics were successfully obtained from pressure sensing MEMS chip with 360μm thickness, which was connected to the substrate by the cavity chip. MEMS and LSI chips were vertically integrated by using the cavity chip without changes of chip design and extra processes. This interconnection technology can give strong solution for heterogeneous integration of MEMS and LSI chips multi-chip module.

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Y2 - 28 September 2009 through 30 September 2009

ER -

Heterogeneous integration technology for MEMS-LSI multi-chip module

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