TY - JOUR
T1 - Heterojunctions of TiO2 nanoparticle film and c-Si with different Fermi level positions
AU - Watanabe, A.
AU - Qin, G.
N1 - Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research on Innovative Areas “New Polymeric Materials Based on Element-Blocks (No.2401)” (24102004) of The Ministry of Education, Culture, Sports, Science, and Technology, Japan.
PY - 2014/9
Y1 - 2014/9
N2 - The photovoltaic properties of heterojunctions of titanium dioxide (TiO2) nanoparticle films with single crystal silicon (c-Si) substrates with different Fermi level (E f) positions were studied. The TiO2 nanoparticles of rutile and anatase structures were studied without any sintering process. To clarify the photovoltaic properties, the characteristics of the heterojunction solar cells of TiO2 nanoparticle films with p-Si and n-Si substrates were investigated, where several Si substrates with different resistivities were used. The I-V characteristics of p-Si/TiO2 heterojunction showed the rectifying behavior and photovoltaic effect. The n-Si/TiO2 heterojunction also showed good rectifying characteristics; however, the conversion efficiency was extremely lower than that of p-Si/TiO2 heterojunction. The conversion efficiencies of various Si/TiO2 (rutile) heterojunction solar cells against the Fermi level E f of c-Si showed the maximum in the p-doped region. The photovoltaic properties of the Si/TiO2 heterojunction also depended on the crystal structure of TiO2, and the conversion efficiency of anatase is higher than that of rutile, which was attributed to the higher carrier mobility of anatase.
AB - The photovoltaic properties of heterojunctions of titanium dioxide (TiO2) nanoparticle films with single crystal silicon (c-Si) substrates with different Fermi level (E f) positions were studied. The TiO2 nanoparticles of rutile and anatase structures were studied without any sintering process. To clarify the photovoltaic properties, the characteristics of the heterojunction solar cells of TiO2 nanoparticle films with p-Si and n-Si substrates were investigated, where several Si substrates with different resistivities were used. The I-V characteristics of p-Si/TiO2 heterojunction showed the rectifying behavior and photovoltaic effect. The n-Si/TiO2 heterojunction also showed good rectifying characteristics; however, the conversion efficiency was extremely lower than that of p-Si/TiO2 heterojunction. The conversion efficiencies of various Si/TiO2 (rutile) heterojunction solar cells against the Fermi level E f of c-Si showed the maximum in the p-doped region. The photovoltaic properties of the Si/TiO2 heterojunction also depended on the crystal structure of TiO2, and the conversion efficiency of anatase is higher than that of rutile, which was attributed to the higher carrier mobility of anatase.
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U2 - 10.1007/s00339-014-8221-x
DO - 10.1007/s00339-014-8221-x
M3 - Article
AN - SCOPUS:84906327323
SN - 0947-8396
VL - 116
SP - 1281
EP - 1285
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 3
ER -
