HF etching mechanisms of advanced low-k films

P. Verdonck, Quoc Toan Le, M. Krishtab, K. Vanstreels, S. Armini, A. Simone, Mai Phuong Nguyen, M. R. Baklanov, S. Van Elshocht

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Scaling of the Cu interconnect structures requires low-k materials which also have an adequate Young's modulus (e.g. E > 6 GPa) and good chemical resistance. This last characteristic can be determined through HF wet etching tests. In this paper, different types of low-k films (k-value range: 2.0-2.3; E range: 2 - 9 GPa) were immersed in a 0.5 volume % HF solution. The HF etching behaviour proved to be very dependent on the wetting properties of the film: even with lower Si-CH3 content, the film with highest water contact angle (i.e. most hydrophobic surface) was the most resistant against the HF etching.

Original languageEnglish
Title of host publication2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014
PublisherIEEE Computer Society
Pages155-158
Number of pages4
ISBN (Print)9781479950164
DOIs
Publication statusPublished - 2014
Event2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014 - San Jose, CA, United States
Duration: 2014 May 202014 May 23

Publication series

Name2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014

Conference

Conference2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014
Country/TerritoryUnited States
CitySan Jose, CA
Period14/5/2014/5/23

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