High-aspect-ratio aluminum-doped zinc oxide nanomechanical resonator

Nguyen Van Toan; Naoki Inomata; Takahito Ono

doi:10.1002/tee.22561

High-aspect-ratio aluminum-doped zinc oxide nanomechanical resonator

Nguyen Van Toan, Naoki Inomata, Takahito Ono

Research output: Contribution to journal › Letter › peer-review

Abstract

This paper reports on the patterning of a high-aspect-ratio aluminum-doped zinc oxide (AZO) capacitive resonator based on the combination of the deep reactive ion etching (deep RIE) and atomic layer deposition (ALD) processes. The suspended AZO capacitive resonator is successfully demonstrated. Its resonant frequency is observed at 10.4 kHz with a quality factor (Q factor) of approximately 500 in a vacuum chamber.

Original language	English
Pages (from-to)	S141-S142
Journal	IEEJ Transactions on Electrical and Electronic Engineering
Volume	12
DOIs	https://doi.org/10.1002/tee.22561
Publication status	Published - 2017 Dec

Keywords

aluminum-doped zinc oxide
atomic layer deposition
deep reactive ion etching
nanomechanical structure

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10.1002/tee.22561

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title = "High-aspect-ratio aluminum-doped zinc oxide nanomechanical resonator",

abstract = "This paper reports on the patterning of a high-aspect-ratio aluminum-doped zinc oxide (AZO) capacitive resonator based on the combination of the deep reactive ion etching (deep RIE) and atomic layer deposition (ALD) processes. The suspended AZO capacitive resonator is successfully demonstrated. Its resonant frequency is observed at 10.4 kHz with a quality factor (Q factor) of approximately 500 in a vacuum chamber.",

keywords = "aluminum-doped zinc oxide, atomic layer deposition, deep reactive ion etching, nanomechanical structure",

author = "{Van Toan}, Nguyen and Naoki Inomata and Takahito Ono",

note = "Publisher Copyright: {\textcopyright} 2017 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.",

year = "2017",

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doi = "10.1002/tee.22561",

language = "English",

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AU - Van Toan, Nguyen

AU - Inomata, Naoki

AU - Ono, Takahito

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N2 - This paper reports on the patterning of a high-aspect-ratio aluminum-doped zinc oxide (AZO) capacitive resonator based on the combination of the deep reactive ion etching (deep RIE) and atomic layer deposition (ALD) processes. The suspended AZO capacitive resonator is successfully demonstrated. Its resonant frequency is observed at 10.4 kHz with a quality factor (Q factor) of approximately 500 in a vacuum chamber.

AB - This paper reports on the patterning of a high-aspect-ratio aluminum-doped zinc oxide (AZO) capacitive resonator based on the combination of the deep reactive ion etching (deep RIE) and atomic layer deposition (ALD) processes. The suspended AZO capacitive resonator is successfully demonstrated. Its resonant frequency is observed at 10.4 kHz with a quality factor (Q factor) of approximately 500 in a vacuum chamber.

KW - aluminum-doped zinc oxide

KW - atomic layer deposition

KW - deep reactive ion etching

KW - nanomechanical structure

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JO - IEEJ Transactions on Electrical and Electronic Engineering

JF - IEEJ Transactions on Electrical and Electronic Engineering

ER -

High-aspect-ratio aluminum-doped zinc oxide nanomechanical resonator

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