TY - JOUR
T1 - High-Aspect-Ratio Parallel-Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition
AU - Shima, Kohei
AU - Funato, Yuichi
AU - Sugiura, Hidetoshi
AU - Sato, Noboru
AU - Fukushima, Yasuyuki
AU - Momose, Takeshi
AU - Shimogaki, Yukihiro
N1 - Funding Information:
The authors are grateful to Dr. Masanori Kubota and Prof. Yoshio Mita of the University of Tokyo for their helpful comments on silicon wafer processing. DRIE was performed in the Takeda clean room at The University of Tokyo, partially financed by Nanotechnology Platform, MEXT, Japan. This work was supported by METI, Japan, and in part by Grants for Excellent Graduate Schools, MEXT, Japan. One of the authors (K.S.) was supported by the Japan Society for the Promotion of Science through the Program for Leading Graduate Schools (MERIT).
Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2016/8/19
Y1 - 2016/8/19
N2 - A method is proposed to fabricate a high-aspect-ratio (HAR) microchannel with a microscopic gap and AR of more than 1000:1 applicable to a test structure for kinetic analysis of chemical vapor deposition (CVD). It has a parallel-plate structure and is formed concisely by sticking a planar Si substrate and a patterned Si or silicon-on-insulator (SOI) substrate fabricated by single-step etching, by clamping them. The resulting feature exhibits a uniform gap and smooth surface morphology along its depth. When CVD is conducted into this HAR microchannel, the sticking probability (η) of film-forming species can be detected by analyzing the film thickness gradient. The use of a microchannel with an AR of 1000:1 enables the elucidation of η values from 1 down to the order of 10−7. A kinetic analysis of SiC-CVD from methyltrichlorosilane and H2 is thus performed. It is found that conformal SiC-film growth occurred inside the HAR microchannel, where one of the film-forming species is revealed to have extremely low η around 10−6. The present study demonstrates that the developed HAR microchannel is a solution to access the overall reaction kinetics of CVDs, including film-forming species with extremely low η.
AB - A method is proposed to fabricate a high-aspect-ratio (HAR) microchannel with a microscopic gap and AR of more than 1000:1 applicable to a test structure for kinetic analysis of chemical vapor deposition (CVD). It has a parallel-plate structure and is formed concisely by sticking a planar Si substrate and a patterned Si or silicon-on-insulator (SOI) substrate fabricated by single-step etching, by clamping them. The resulting feature exhibits a uniform gap and smooth surface morphology along its depth. When CVD is conducted into this HAR microchannel, the sticking probability (η) of film-forming species can be detected by analyzing the film thickness gradient. The use of a microchannel with an AR of 1000:1 enables the elucidation of η values from 1 down to the order of 10−7. A kinetic analysis of SiC-CVD from methyltrichlorosilane and H2 is thus performed. It is found that conformal SiC-film growth occurred inside the HAR microchannel, where one of the film-forming species is revealed to have extremely low η around 10−6. The present study demonstrates that the developed HAR microchannel is a solution to access the overall reaction kinetics of CVDs, including film-forming species with extremely low η.
KW - chemical vapor deposition
KW - high-aspect-ratio feature
KW - silicon carbides
KW - sticking probability
KW - test structures
UR - http://www.scopus.com/inward/record.url?scp=84978198926&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84978198926&partnerID=8YFLogxK
U2 - 10.1002/admi.201600254
DO - 10.1002/admi.201600254
M3 - Article
AN - SCOPUS:84978198926
SN - 2196-7350
VL - 3
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 16
M1 - 1600254
ER -