TY - JOUR
T1 - High-current density and high-asymmetry MIIM diode based on oxygen-non-stoichiometry controlled homointerface structure for optical rectenna
AU - Matsuura, Daisuke
AU - Shimizu, Makoto
AU - Yugami, Hiroo
N1 - Funding Information:
We acknowledge T. Miyazaki for helping in TEM observation and XRR analysis. The authors gratefully acknowledge financial support from JSPS KAKENHI, Grant Number: 15K13395.
Publisher Copyright:
© 2019, The Author(s).
PY - 2019/12/1
Y1 - 2019/12/1
N2 - Optical rectennas are expected to be applied as power sources for energy harvesting because they can convert a wide range of electromagnetic waves, from visible light to infrared. The critical element in these systems is a diode, which can respond to the changes in electrical polarity in the optical frequency. By considering trade-off relationship between current density and asymmetry of IV characteristic, we reveal the efficiency limitations of MIM diodes for the optical rectenna and suggest a novel tunnel diode using a double insulator with an oxygen-non-stoichiometry controlled homointerface structure (MOx/MOx−y). A double-insulator diode composed of Pt/TiO2/TiO1.4/Ti, in which a natural oxide layer of TiO1.4 is formed by annealing under atmosphere. The diode has as high-current-density of 4.6 × 106 A/m2, which is 400 times higher than the theoretical one obtained using Pt/TiO2/Ti MIM diodes. In addition, a high-asymmetry of 7.3 is realized simultaneously. These are expected to increase the optical rectenna efficiency by more than 1,000 times, compared to the state-of-the art system. Further, by optimizing the thickness of the double insulator layer, it is demonstrated that this diode can attain a current density of 108 A/m2 and asymmetry of 9.0, which are expected to increase the optical rectenna efficiency by 10,000.
AB - Optical rectennas are expected to be applied as power sources for energy harvesting because they can convert a wide range of electromagnetic waves, from visible light to infrared. The critical element in these systems is a diode, which can respond to the changes in electrical polarity in the optical frequency. By considering trade-off relationship between current density and asymmetry of IV characteristic, we reveal the efficiency limitations of MIM diodes for the optical rectenna and suggest a novel tunnel diode using a double insulator with an oxygen-non-stoichiometry controlled homointerface structure (MOx/MOx−y). A double-insulator diode composed of Pt/TiO2/TiO1.4/Ti, in which a natural oxide layer of TiO1.4 is formed by annealing under atmosphere. The diode has as high-current-density of 4.6 × 106 A/m2, which is 400 times higher than the theoretical one obtained using Pt/TiO2/Ti MIM diodes. In addition, a high-asymmetry of 7.3 is realized simultaneously. These are expected to increase the optical rectenna efficiency by more than 1,000 times, compared to the state-of-the art system. Further, by optimizing the thickness of the double insulator layer, it is demonstrated that this diode can attain a current density of 108 A/m2 and asymmetry of 9.0, which are expected to increase the optical rectenna efficiency by 10,000.
UR - http://www.scopus.com/inward/record.url?scp=85077054249&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85077054249&partnerID=8YFLogxK
U2 - 10.1038/s41598-019-55898-x
DO - 10.1038/s41598-019-55898-x
M3 - Article
C2 - 31873112
AN - SCOPUS:85077054249
SN - 2045-2322
VL - 9
JO - Scientific Reports
JF - Scientific Reports
IS - 1
M1 - 19639
ER -