High density and high mobility transport characteristics in gated undoped GaAs/AlxGa1 -xAs heterostructures

J. Herfort; Y. Hirayama

doi:10.1016/S0038-1101(97)00101-9

High density and high mobility transport characteristics in gated undoped GaAs/Al_xGa₁ _-xAs heterostructures

J. Herfort, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The two-dimensional electron gas which is formed at the interface in undoped GaAs/Al_xGa_1-xAs heterostructures by the electric field generated by a top gate is studied. The barrier region consists of an Al_0.3Ga_0.7As/Al_0.5Ga_0.5As superlattice to prevent undesirable tunneling through the barrier. Therefore, we are able to achieve high electron densities exceeding 10¹⁶ m^-2 with sufficient small gate leakage currents in a MISFET like device for the first time. Despite the high electron density in the sample rather high mobilities of about 100 m² V s^-1 can be maintained at low temperatures. The population of the second subband is studied from Shubnikov-de Haas measurements in these devices. The role of intersubband scattering is important for understanding the magneto-transport experiments.

Original language	English
Pages (from-to)	1535-1540
Number of pages	6
Journal	Solid-State Electronics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1016/S0038-1101(97)00101-9
Publication status	Published - 1997 Oct

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abstract = "The two-dimensional electron gas which is formed at the interface in undoped GaAs/AlxGa1-xAs heterostructures by the electric field generated by a top gate is studied. The barrier region consists of an Al0.3Ga0.7As/Al0.5Ga0.5As superlattice to prevent undesirable tunneling through the barrier. Therefore, we are able to achieve high electron densities exceeding 1016 m-2 with sufficient small gate leakage currents in a MISFET like device for the first time. Despite the high electron density in the sample rather high mobilities of about 100 m2 V s-1 can be maintained at low temperatures. The population of the second subband is studied from Shubnikov-de Haas measurements in these devices. The role of intersubband scattering is important for understanding the magneto-transport experiments.",

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AB - The two-dimensional electron gas which is formed at the interface in undoped GaAs/AlxGa1-xAs heterostructures by the electric field generated by a top gate is studied. The barrier region consists of an Al0.3Ga0.7As/Al0.5Ga0.5As superlattice to prevent undesirable tunneling through the barrier. Therefore, we are able to achieve high electron densities exceeding 1016 m-2 with sufficient small gate leakage currents in a MISFET like device for the first time. Despite the high electron density in the sample rather high mobilities of about 100 m2 V s-1 can be maintained at low temperatures. The population of the second subband is studied from Shubnikov-de Haas measurements in these devices. The role of intersubband scattering is important for understanding the magneto-transport experiments.

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High density and high mobility transport characteristics in gated undoped GaAs/Al_xGa₁ _-xAs heterostructures

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