TY - JOUR
T1 - High efficiency-carrier-generation for the oxygen release reaction in indium tin oxide
AU - Omata, Takahisa
AU - Fujiwara, Hiroyuki
AU - Otsuka-Yao-Matsuo, Shinya
AU - Ono, Naoki
AU - Ikawa, Hiroyuki
PY - 1998/7/15
Y1 - 1998/7/15
N2 - Indium tin oxide (ITO) sinters were heated up to 1073 and 1273 K under the condition that P(O2)/P* = 4.9 × 10-4 (P*: atmospheric pressure), when P(O2) was approximately 50Pa, in a closed-system oxygen-gas analyzer, and the number of oxygen atoms released from ITO was quantitatively determined. The conduction electron densities were determined by Hall measurements at room temperature. It was shown that the release of one oxygen atom corresponded to the generation of two conduction electrons, i.e., the efficiency-carrier-generation for the oxygen release from the ITO was almost one. Based on the crystal structure of the ITO, the oxygen atom released was originally at the 16c site in the space group of Ia3 as an interstitial excess oxygen, Oi″.
AB - Indium tin oxide (ITO) sinters were heated up to 1073 and 1273 K under the condition that P(O2)/P* = 4.9 × 10-4 (P*: atmospheric pressure), when P(O2) was approximately 50Pa, in a closed-system oxygen-gas analyzer, and the number of oxygen atoms released from ITO was quantitatively determined. The conduction electron densities were determined by Hall measurements at room temperature. It was shown that the release of one oxygen atom corresponded to the generation of two conduction electrons, i.e., the efficiency-carrier-generation for the oxygen release from the ITO was almost one. Based on the crystal structure of the ITO, the oxygen atom released was originally at the 16c site in the space group of Ia3 as an interstitial excess oxygen, Oi″.
KW - Conduction electron density
KW - Efficiency-carrier-generation
KW - Electrical conductivity
KW - Indium tin oxide
KW - Oxygen release
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U2 - 10.1143/jjap.37.l879
DO - 10.1143/jjap.37.l879
M3 - Article
AN - SCOPUS:0032115696
SN - 0021-4922
VL - 37
SP - L879-L881
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 7 SUPPL. B
ER -