High-efficiency neutral-beam generation by combination of inductively coupled plasma and parallel plate DC bias

Seiji Samukawa, Keisuke Sakamoto, Katsunori Ichiki

Research output: Contribution to journalArticlepeer-review

75 Citations (Scopus)


To avoid several kinds of radiation damage caused by charge build-up and by ultraviolet and X-ray photons during etching processes, we have developed a high-performance, neutral-beam etching system. The neutral-beam source consists of an inductively coupled plasma (ICP) source and top and bottom carbon parallel plates. The bottom carbon plate includes numerous apertures for extracting neutral beams from the plasma. By supplying a direct current (DC) bias to the top plate, the generated ions are accelerated towards the bottom plate. Most of them are efficiently converted into neutral atoms, either by neutralization in charge-transfer collisions with gas molecules during the ion transport and with aperture sidewalls in the bottom plate, or by recombination with low-energy electrons near the end of the bottom plate. When the aperture diameter and aperture length were 1 mm and 10 mm, respectively, the neutralization efficiency was almost 100% and the neutral flux density was equivalent to 1.2-2.8 mA/cm2 . A neutral beam could thus be produced efficiently from the ICP source and the apertures in the bottom plate.

Original languageEnglish
Pages (from-to)L779-L782
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number7 B
Publication statusPublished - 2001 Jul 15


  • Charge build-up damage
  • Inductively coupled plasma
  • Neutral beam etching
  • Neutralization efficiency
  • Radiation damage

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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