High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

Hiroaki Yoda; Tatsuya Kishi; Toshihiko Nagase; Masatoshi Yoshikawa; Katsuya Nishiyama; Eiji Kitagawa; Tadaomi Daibou; Minoru Amano; Naoharu Shimomura; Shigeki Takahashi; Tadashi Kai; Masahiko Nakayama; Hisanori Aikawa; Sumio Ikegawa; Makoto Nagamine; Junichi Ozeki; Shigemi Mizukami; Mikihiko Oogane; Yasuo Ando; Shinji Yuasa; Kei Yakushiji; Hitoshi Kubota; Yoshishige Suzuki; Yoshinobu Nakatani; Terunobu Miyazaki; Koji Ando

doi:10.1016/j.cap.2009.12.021

High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

Hiroaki Yoda, Tatsuya Kishi, Toshihiko Nagase, Masatoshi Yoshikawa, Katsuya Nishiyama, Eiji Kitagawa, Tadaomi Daibou, Minoru Amano, Naoharu Shimomura, Shigeki Takahashi, Tadashi Kai, Masahiko Nakayama, Hisanori Aikawa, Sumio Ikegawa, Makoto Nagamine, Junichi Ozeki, Shigemi Mizukami, Mikihiko Oogane, Yasuo Ando, Shinji YuasaKei Yakushiji, Hitoshi Kubota, Yoshishige Suzuki, Yoshinobu Nakatani, Terunobu Miyazaki, Koji Ando

Research output: Contribution to journal › Article › peer-review

160 Citations (Scopus)

Abstract

An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 μA was obtained for a write current width of 5 ms. The efficiency of spin transfer torque writing was proved to be higher than those for in-plane MTJs. The estimated Ic for the MTJ with 50 nsec pulse width is lower than 20 μA and smaller than the drive currents of CMOS transistor at Gbits density.

Original language	English
Pages (from-to)	e87-e89
Journal	Current Applied Physics
Volume	10
Issue number	1 SUPPL. 1
DOIs	https://doi.org/10.1016/j.cap.2009.12.021
Publication status	Published - 2010 Jan

Keywords

Critical switching currents
Damping constant
Fe alloy
Gbits density
MRAM
MTJ
Perpendicular
Spin transfer torque

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10.1016/j.cap.2009.12.021

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Yoda, H., Kishi, T., Nagase, T., Yoshikawa, M., Nishiyama, K., Kitagawa, E., Daibou, T., Amano, M., Shimomura, N., Takahashi, S., Kai, T., Nakayama, M., Aikawa, H., Ikegawa, S., Nagamine, M., Ozeki, J., Mizukami, S., Oogane, M., Ando, Y., ... Ando, K. (2010). High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs. Current Applied Physics, 10(1 SUPPL. 1), e87-e89. https://doi.org/10.1016/j.cap.2009.12.021

@article{7052d8821bd049e0814397afb1734357,

title = "High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs",

abstract = "An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 μA was obtained for a write current width of 5 ms. The efficiency of spin transfer torque writing was proved to be higher than those for in-plane MTJs. The estimated Ic for the MTJ with 50 nsec pulse width is lower than 20 μA and smaller than the drive currents of CMOS transistor at Gbits density.",

keywords = "Critical switching currents, Damping constant, Fe alloy, Gbits density, MRAM, MTJ, Perpendicular, Spin transfer torque",

author = "Hiroaki Yoda and Tatsuya Kishi and Toshihiko Nagase and Masatoshi Yoshikawa and Katsuya Nishiyama and Eiji Kitagawa and Tadaomi Daibou and Minoru Amano and Naoharu Shimomura and Shigeki Takahashi and Tadashi Kai and Masahiko Nakayama and Hisanori Aikawa and Sumio Ikegawa and Makoto Nagamine and Junichi Ozeki and Shigemi Mizukami and Mikihiko Oogane and Yasuo Ando and Shinji Yuasa and Kei Yakushiji and Hitoshi Kubota and Yoshishige Suzuki and Yoshinobu Nakatani and Terunobu Miyazaki and Koji Ando",

note = "Funding Information: This work is supported by the New Energy and Industrial Technology Development Organization (NEDO).",

year = "2010",

month = jan,

doi = "10.1016/j.cap.2009.12.021",

language = "English",

volume = "10",

pages = "e87--e89",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "1 SUPPL. 1",

}

Yoda, H, Kishi, T, Nagase, T, Yoshikawa, M, Nishiyama, K, Kitagawa, E, Daibou, T, Amano, M, Shimomura, N, Takahashi, S, Kai, T, Nakayama, M, Aikawa, H, Ikegawa, S, Nagamine, M, Ozeki, J, Mizukami, S , Oogane, M , Ando, Y, Yuasa, S, Yakushiji, K, Kubota, H, Suzuki, Y, Nakatani, Y, Miyazaki, T & Ando, K 2010, 'High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs', Current Applied Physics, vol. 10, no. 1 SUPPL. 1, pp. e87-e89. https://doi.org/10.1016/j.cap.2009.12.021

TY - JOUR

T1 - High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

AU - Yoda, Hiroaki

AU - Kishi, Tatsuya

AU - Nagase, Toshihiko

AU - Yoshikawa, Masatoshi

AU - Nishiyama, Katsuya

AU - Kitagawa, Eiji

AU - Daibou, Tadaomi

AU - Amano, Minoru

AU - Shimomura, Naoharu

AU - Takahashi, Shigeki

AU - Kai, Tadashi

AU - Nakayama, Masahiko

AU - Aikawa, Hisanori

AU - Ikegawa, Sumio

AU - Nagamine, Makoto

AU - Ozeki, Junichi

AU - Mizukami, Shigemi

AU - Oogane, Mikihiko

AU - Ando, Yasuo

AU - Yuasa, Shinji

AU - Yakushiji, Kei

AU - Kubota, Hitoshi

AU - Suzuki, Yoshishige

AU - Nakatani, Yoshinobu

AU - Miyazaki, Terunobu

AU - Ando, Koji

N1 - Funding Information: This work is supported by the New Energy and Industrial Technology Development Organization (NEDO).

PY - 2010/1

Y1 - 2010/1

N2 - An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 μA was obtained for a write current width of 5 ms. The efficiency of spin transfer torque writing was proved to be higher than those for in-plane MTJs. The estimated Ic for the MTJ with 50 nsec pulse width is lower than 20 μA and smaller than the drive currents of CMOS transistor at Gbits density.

AB - An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 μA was obtained for a write current width of 5 ms. The efficiency of spin transfer torque writing was proved to be higher than those for in-plane MTJs. The estimated Ic for the MTJ with 50 nsec pulse width is lower than 20 μA and smaller than the drive currents of CMOS transistor at Gbits density.

KW - Critical switching currents

KW - Damping constant

KW - Fe alloy

KW - Gbits density

KW - MRAM

KW - MTJ

KW - Perpendicular

KW - Spin transfer torque

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DO - 10.1016/j.cap.2009.12.021

M3 - Article

AN - SCOPUS:77649231935

SN - 1567-1739

VL - 10

SP - e87-e89

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1 SUPPL. 1

ER -

High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

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Keywords

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