Abstract
AlGaAs/GaAs modulation-doped structures with low-temperature electron mobility exceeding 107 cm2/Vs at a carrier concentration of 2.5 - 3 x 1011 cm-2 are grown by molecular beam epitaxy. Electron mobility above 8 x 106 cm2/Vs is reproducibly obtained over more than 6 months by careful baking of the growth system and optimization of the layer structure. Voltage-current measurements showing nonlinear and negative resistance characteristics at low temperatures indicate that the ballistic motion of electrons dominates the transport characteristics of these samples.
| Original language | English |
|---|---|
| Pages (from-to) | 9092-9905 |
| Number of pages | 814 |
| Journal | Japanese journal of applied physics |
| Volume | 30 |
| Issue number | 5 R |
| DOIs | |
| Publication status | Published - 1991 May |
| Externally published | Yes |
Keywords
- Ballistic transport
- Electron mobility
- MBE
- Modulation-doped structure
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)