Here we report investigation of valence band electronic states of ferromagnetic Ga0.96Mn0.04N by bulk-sensitive X-ray photoemission, which is realized at high flux X-ray undulator beamline BL29XU of SPring-8, at photon energy of 5.95keV. We have observed that Mn doping introduces a new structure in the band gap region near the top of the valence band, and also a broader structure in deeper valence band region. Basing upon the first principle calculation, these structures are assigned as Ga 4s originated states, which are raised by hybridization between 3d orbitals of Mn with GaN host orbitals. The present result evidences the second nearest Ga bonds are affected by that Mn-N bond formation, suggesting the long-range interaction of Mn in this host material.
- High-energy photoemission spectroscopy