High-energy-resolution electron energy-loss spectroscopy study of the electronic structure of Cu- and Mg-Si-doped β-rhombohedral boron crystals

Electronic structures of Cu and Mg-Si-doped β-rhombohedral boron (β-r-B) crystals were studied by using a high-energy-resolution electron energy-loss spectroscopy microscope. Boron 1s electron excitation spectra, which show the density of states of the conduction bands, of the crystals were obtained from single crystalline areas of 100nm in diameter. The spectrum of Cu-doped β-r-B showed a chemical shift to a lower binding energy side. It means an electron transfers from the doped Cu atoms to B atoms. The intensity distributions of the spectrum was almost the same as that of the non-doped β-r-B, which suggests that all of the doped electrons occupy the intrinsic acceptor level just above the valence bands. The spectrum of Mg-Si-doped β-r-B showed not only a chemical shift to a lower binding energy side but also a sharp intensity increase at the onset with a width of an energy resolution of the experiment. The sharp onset may be assigned to a Fermi edge. It indicates that the doped electrons fill up the acceptor level and occupy the conduction bands forming the Fermi edge, a metallization of β-r-B by the Mg-Si-doping.