High-frequency characterization of intrinsic FinFET channel

H. Sakai; S. O'Uchi; T. Matsukawa; K. Endo; Y. X. Liu; T. Tsukada; Y. Ishikawa; T. Nakagawa; T. Sekigawa; H. Koike; K. Sakamoto; M. Masahara; H. Ishikuro

doi:10.1109/SOI.2010.5641064

High-frequency characterization of intrinsic FinFET channel

H. Sakai, S. O'Uchi, T. Matsukawa, K. Endo, Y. X. Liu, T. Tsukada, Y. Ishikawa, T. Nakagawa, T. Sekigawa, H. Koike, K. Sakamoto, M. Masahara, H. Ishikuro

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Original language	English
Title of host publication	2010 IEEE International SOI Conference, SOI 2010
DOIs	https://doi.org/10.1109/SOI.2010.5641064
Publication status	Published - 2010 Dec 30
Externally published	Yes
Event	2010 IEEE International Silicon on Insulator Conference, SOI 2010 - San Diego, CA, United States Duration: 2010 Oct 11 → 2010 Oct 14

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Other

Other	2010 IEEE International Silicon on Insulator Conference, SOI 2010
Country/Territory	United States
City	San Diego, CA
Period	10/10/11 → 10/10/14

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/SOI.2010.5641064

Cite this

Sakai, H., O'Uchi, S., Matsukawa, T., Endo, K., Liu, Y. X., Tsukada, T., Ishikawa, Y., Nakagawa, T., Sekigawa, T., Koike, H., Sakamoto, K., Masahara, M., & Ishikuro, H. (2010). High-frequency characterization of intrinsic FinFET channel. In 2010 IEEE International SOI Conference, SOI 2010 [5641064] (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2010.5641064

Sakai, H, O'Uchi, S, Matsukawa, T, Endo, K, Liu, YX, Tsukada, T, Ishikawa, Y, Nakagawa, T, Sekigawa, T, Koike, H, Sakamoto, K, Masahara, M & Ishikuro, H 2010, High-frequency characterization of intrinsic FinFET channel. in 2010 IEEE International SOI Conference, SOI 2010., 5641064, Proceedings - IEEE International SOI Conference, 2010 IEEE International Silicon on Insulator Conference, SOI 2010, San Diego, CA, United States, 10/10/11. https://doi.org/10.1109/SOI.2010.5641064

@inproceedings{7b12585127144f4096e7db7ac46ff019,

title = "High-frequency characterization of intrinsic FinFET channel",

author = "H. Sakai and S. O'Uchi and T. Matsukawa and K. Endo and Liu, {Y. X.} and T. Tsukada and Y. Ishikawa and T. Nakagawa and T. Sekigawa and H. Koike and K. Sakamoto and M. Masahara and H. Ishikuro",

year = "2010",

month = dec,

day = "30",

doi = "10.1109/SOI.2010.5641064",

language = "English",

isbn = "9781424491285",

series = "Proceedings - IEEE International SOI Conference",

booktitle = "2010 IEEE International SOI Conference, SOI 2010",

note = "2010 IEEE International Silicon on Insulator Conference, SOI 2010 ; Conference date: 11-10-2010 Through 14-10-2010",

}

TY - GEN

T1 - High-frequency characterization of intrinsic FinFET channel

AU - Sakai, H.

AU - O'Uchi, S.

AU - Matsukawa, T.

AU - Endo, K.

AU - Liu, Y. X.

AU - Tsukada, T.

AU - Ishikawa, Y.

AU - Nakagawa, T.

AU - Sekigawa, T.

AU - Koike, H.

AU - Sakamoto, K.

AU - Masahara, M.

AU - Ishikuro, H.

PY - 2010/12/30

Y1 - 2010/12/30

UR - http://www.scopus.com/inward/record.url?scp=78650546976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650546976&partnerID=8YFLogxK

U2 - 10.1109/SOI.2010.5641064

DO - 10.1109/SOI.2010.5641064

M3 - Conference contribution

AN - SCOPUS:78650546976

SN - 9781424491285

T3 - Proceedings - IEEE International SOI Conference

BT - 2010 IEEE International SOI Conference, SOI 2010

T2 - 2010 IEEE International Silicon on Insulator Conference, SOI 2010

Y2 - 11 October 2010 through 14 October 2010

ER -

High-frequency characterization of intrinsic FinFET channel

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ASJC Scopus subject areas

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