High-frequency, low-noise Si bipolar transistor fabricated using self-aligned metal/IDP technology

Hiromi Shimamoto, Takahiro Onai, Eiji Ohue, Masamichi Tanabe, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review


A high-frequency, low-noise silicon bipolar transistor that can be used in over-10 Gb/s optical communication systems and wireless communication systems has been developed. The silicon bipolar transistor was fabricated using self-aligned metal/IDP (SMI) technology, which produces a self-aligned base electrode of stacked layers of metal and in-situ doped poly-Si (IDP) by low-temperature selective tungsten CVD. It provides a low base resistance and high-cutoff frequency. The base resistance is reduced to half that of a transistor with a conventional poly-Si base electrode. By using the SMI technology and optimizing the depth of the emitter and the link base, we achieved the maximum oscillation frequency of 80 GHz, a minimum gate delay in an ECL of 11.6 ps, and the minimum noise figure of 0.34 dB at 2 GHz, which are the highest performances among those obtained from ion-implanted base Si bipolar transistors, and are comparable to those of SiGe base heterojunction bipolar transistors.

Original languageEnglish
Pages (from-to)2007-2012
Number of pages6
JournalIEICE Transactions on Electronics
Issue number11
Publication statusPublished - 2000 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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