High frequency responses of YBa2Cu3O7-y Josephson junctions on Si substrates fabricated by focused electron beam irradiation

Sang Jae Kim; Hiroaki Myoren; Jian Chen; Kensuke Nakajima; Tsutomu Yamashita; Masayoshi Esashi

doi:10.1143/jjap.36.l1096

High frequency responses of YBa₂Cu₃O_7-y Josephson junctions on Si substrates fabricated by focused electron beam irradiation

Sang Jae Kim, Hiroaki Myoren, Jian Chen, Kensuke Nakajima, Tsutomu Yamashita, Masayoshi Esashi

Research output: Contribution to journal › Article › peer-review

Abstract

YBa₂Cu₃O_7-y (YBCO) Josephson junctions on silicon (Si) substrates were fabricated by focused electron beam (FEB) irradiation. The junctions exhibit an operation temperature (T) dependence of current (I)-voltage (V) curves in the same manner as an SNS junction. As the temperature decreases, the junctions exhibit weak microwave-induced steps with flux flow-like I-V curves. At 25 K where the resistively shunted junction (RSJ)-like I-V curve appears, the junction exhibited the microwave-induced Shapiro steps up to 4 mV in dV/dI-V curves. This suggests that the junction can respond up to about 2 THz.

Original language	English
Pages (from-to)	L1096-L1099
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	8 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.36.l1096
Publication status	Published - 1997 Aug 15
Externally published	Yes

Keywords

FEB irradiation
High frequency response
Josephson junction
Si
YBaCuO

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.36.l1096

Cite this

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title = "High frequency responses of YBa2Cu3O7-y Josephson junctions on Si substrates fabricated by focused electron beam irradiation",

abstract = "YBa2Cu3O7-y (YBCO) Josephson junctions on silicon (Si) substrates were fabricated by focused electron beam (FEB) irradiation. The junctions exhibit an operation temperature (T) dependence of current (I)-voltage (V) curves in the same manner as an SNS junction. As the temperature decreases, the junctions exhibit weak microwave-induced steps with flux flow-like I-V curves. At 25 K where the resistively shunted junction (RSJ)-like I-V curve appears, the junction exhibited the microwave-induced Shapiro steps up to 4 mV in dV/dI-V curves. This suggests that the junction can respond up to about 2 THz.",

keywords = "FEB irradiation, High frequency response, Josephson junction, Si, YBaCuO",

author = "Kim, {Sang Jae} and Hiroaki Myoren and Jian Chen and Kensuke Nakajima and Tsutomu Yamashita and Masayoshi Esashi",

year = "1997",

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doi = "10.1143/jjap.36.l1096",

language = "English",

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T1 - High frequency responses of YBa2Cu3O7-y Josephson junctions on Si substrates fabricated by focused electron beam irradiation

AU - Kim, Sang Jae

AU - Myoren, Hiroaki

AU - Chen, Jian

AU - Nakajima, Kensuke

AU - Yamashita, Tsutomu

AU - Esashi, Masayoshi

PY - 1997/8/15

Y1 - 1997/8/15

N2 - YBa2Cu3O7-y (YBCO) Josephson junctions on silicon (Si) substrates were fabricated by focused electron beam (FEB) irradiation. The junctions exhibit an operation temperature (T) dependence of current (I)-voltage (V) curves in the same manner as an SNS junction. As the temperature decreases, the junctions exhibit weak microwave-induced steps with flux flow-like I-V curves. At 25 K where the resistively shunted junction (RSJ)-like I-V curve appears, the junction exhibited the microwave-induced Shapiro steps up to 4 mV in dV/dI-V curves. This suggests that the junction can respond up to about 2 THz.

AB - YBa2Cu3O7-y (YBCO) Josephson junctions on silicon (Si) substrates were fabricated by focused electron beam (FEB) irradiation. The junctions exhibit an operation temperature (T) dependence of current (I)-voltage (V) curves in the same manner as an SNS junction. As the temperature decreases, the junctions exhibit weak microwave-induced steps with flux flow-like I-V curves. At 25 K where the resistively shunted junction (RSJ)-like I-V curve appears, the junction exhibited the microwave-induced Shapiro steps up to 4 mV in dV/dI-V curves. This suggests that the junction can respond up to about 2 THz.

KW - FEB irradiation

KW - High frequency response

KW - Josephson junction

KW - Si

KW - YBaCuO

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