Abstract
A high-frequency reverse conducting gate-turn-off (GTO) thyristor (RC-GTO) was developed as an attempt to increase the switching frequency of 2.5-kV class RC-GTOs up to 1.5 kHz. A turn-off capability of 2000 A at a snubber capacitance of 2 μF was realized by a novel two-step gate structure. This device has a high dv/dt capability of 1000 V/μs at turn-off as well as a high di/dt capability of 600 A/μs at turn-on, and it has good switching performance in a 1.5-Hz pulse-width-modulated (PWM) inverter simulation. These characteristics are realized by adopting lifetime control with platinum.
| Original language | English |
|---|---|
| Pages | 256-261 |
| Number of pages | 6 |
| Publication status | Published - 1990 |
| Externally published | Yes |
| Event | Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90 - Tokyo, Jpn Duration: 1990 Apr 4 → 1990 Apr 6 |
Other
| Other | Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90 |
|---|---|
| City | Tokyo, Jpn |
| Period | 90/4/4 → 90/4/6 |
ASJC Scopus subject areas
- Engineering(all)