High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth

Shinobu Takehiro; Masao Sakuraba; Toshiaki Tsuchiya; Junichi Murota

doi:10.1016/j.tsf.2008.08.040

High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth

Shinobu Takehiro, Masao Sakuraba, Toshiaki Tsuchiya, Junichi Murota

RIEC - Computing System Platforms Division

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

High performance high Ge fraction intrinsic Si_{1 - x}Ge_x-heterochannel MOSFETs with embedded Si_{1 - x}Ge_x source/drain electrodes fabricated by the use of a low thermal budget process below 700 °C are demonstrated for the first time. The carrier mobility is very high in spite of high concentration impurity doping to the substrates for the threshold voltage control. It is suggested that this superior device characteristic is caused by suppression of impurity diffusion into the Si_{1 - x}Ge_x-heterochannel, the high Ge fraction in the Si_{1 - x}Ge_x-heterochannel and compressive stress applied to the Si_{1 - x}Ge_x-heterochannel due to the embedded Si_{1 - x}Ge_x source/drain.

Original language	English
Pages (from-to)	346-349
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.040
Publication status	Published - 2008 Nov 3

Keywords

Carrier mobility
Embedded SiGe source/drain
In-situ doping
Intrinsic channel
SiGe epitaxial growth
SiGe-heterochannel MOSFET

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10.1016/j.tsf.2008.08.040

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title = "High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth",

abstract = "High performance high Ge fraction intrinsic Si1 - xGex-heterochannel MOSFETs with embedded Si1 - xGex source/drain electrodes fabricated by the use of a low thermal budget process below 700 °C are demonstrated for the first time. The carrier mobility is very high in spite of high concentration impurity doping to the substrates for the threshold voltage control. It is suggested that this superior device characteristic is caused by suppression of impurity diffusion into the Si1 - xGex-heterochannel, the high Ge fraction in the Si1 - xGex-heterochannel and compressive stress applied to the Si1 - xGex-heterochannel due to the embedded Si1 - xGex source/drain.",

keywords = "Carrier mobility, Embedded SiGe source/drain, In-situ doping, Intrinsic channel, SiGe epitaxial growth, SiGe-heterochannel MOSFET",

author = "Shinobu Takehiro and Masao Sakuraba and Toshiaki Tsuchiya and Junichi Murota",

note = "Funding Information: This study was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2008",

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doi = "10.1016/j.tsf.2008.08.040",

language = "English",

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T1 - High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth

AU - Takehiro, Shinobu

AU - Sakuraba, Masao

AU - Tsuchiya, Toshiaki

AU - Murota, Junichi

N1 - Funding Information: This study was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - High performance high Ge fraction intrinsic Si1 - xGex-heterochannel MOSFETs with embedded Si1 - xGex source/drain electrodes fabricated by the use of a low thermal budget process below 700 °C are demonstrated for the first time. The carrier mobility is very high in spite of high concentration impurity doping to the substrates for the threshold voltage control. It is suggested that this superior device characteristic is caused by suppression of impurity diffusion into the Si1 - xGex-heterochannel, the high Ge fraction in the Si1 - xGex-heterochannel and compressive stress applied to the Si1 - xGex-heterochannel due to the embedded Si1 - xGex source/drain.

AB - High performance high Ge fraction intrinsic Si1 - xGex-heterochannel MOSFETs with embedded Si1 - xGex source/drain electrodes fabricated by the use of a low thermal budget process below 700 °C are demonstrated for the first time. The carrier mobility is very high in spite of high concentration impurity doping to the substrates for the threshold voltage control. It is suggested that this superior device characteristic is caused by suppression of impurity diffusion into the Si1 - xGex-heterochannel, the high Ge fraction in the Si1 - xGex-heterochannel and compressive stress applied to the Si1 - xGex-heterochannel due to the embedded Si1 - xGex source/drain.

KW - Carrier mobility

KW - Embedded SiGe source/drain

KW - In-situ doping

KW - Intrinsic channel

KW - SiGe epitaxial growth

KW - SiGe-heterochannel MOSFET

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U2 - 10.1016/j.tsf.2008.08.040

DO - 10.1016/j.tsf.2008.08.040

M3 - Article

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SN - 0040-6090

VL - 517

SP - 346

EP - 349

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth

Abstract

Keywords

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