High hole mobility exceeding 4 cm2/Vs in top-gate C 8-BTBT field-effect transistors processed by spin coating

Fumio Mochizuki; Toshiyuki Endo; Takashi Nagase; Takashi Kobayashi; Kazuo Takimiya; Masaaki Ikeda; Hiroyoshi Naito

High hole mobility exceeding 4 cm²/Vs in top-gate C ₈-BTBT field-effect transistors processed by spin coating

Fumio Mochizuki, Toshiyuki Endo, Takashi Nagase, Takashi Kobayashi, Kazuo Takimiya, Masaaki Ikeda, Hiroyoshi Naito

SCI - Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C₈-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C₈-BTBT films exhibit high maximum field-effect mobility of 4.1 cm²/Vs and low average threshold voltage of -7.0 V.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	85-88
Number of pages	4
Publication status	Published - 2011
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 2011 Dec 7 → 2011 Dec 9

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	18th International Display Workshops 2011, IDW 2011
Country/Territory	Japan
City	Nagoya
Period	11/12/7 → 11/12/9

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@inproceedings{7ed1ab96f11a40878e14ceb448a2ddf0,

title = "High hole mobility exceeding 4 cm2/Vs in top-gate C 8-BTBT field-effect transistors processed by spin coating",

abstract = "We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C8-BTBT films exhibit high maximum field-effect mobility of 4.1 cm2/Vs and low average threshold voltage of -7.0 V.",

author = "Fumio Mochizuki and Toshiyuki Endo and Takashi Nagase and Takashi Kobayashi and Kazuo Takimiya and Masaaki Ikeda and Hiroyoshi Naito",

year = "2011",

language = "English",

isbn = "9781622761906",

series = "Proceedings of the International Display Workshops",

pages = "85--88",

booktitle = "Society for Information Display - 18th International Display Workshops 2011, IDW'11",

note = "18th International Display Workshops 2011, IDW 2011 ; Conference date: 07-12-2011 Through 09-12-2011",

}

Mochizuki, F, Endo, T, Nagase, T, Kobayashi, T, Takimiya, K, Ikeda, M & Naito, H 2011, High hole mobility exceeding 4 cm²/Vs in top-gate C ₈-BTBT field-effect transistors processed by spin coating. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. Proceedings of the International Display Workshops, vol. 1, pp. 85-88, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 11/12/7.

High hole mobility exceeding 4 cm²/Vs in top-gate C ₈-BTBT field-effect transistors processed by spin coating. / Mochizuki, Fumio; Endo, Toshiyuki; Nagase, Takashi et al.
Society for Information Display - 18th International Display Workshops 2011, IDW'11. 2011. p. 85-88 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High hole mobility exceeding 4 cm2/Vs in top-gate C 8-BTBT field-effect transistors processed by spin coating

AU - Mochizuki, Fumio

AU - Endo, Toshiyuki

AU - Nagase, Takashi

AU - Kobayashi, Takashi

AU - Takimiya, Kazuo

AU - Ikeda, Masaaki

AU - Naito, Hiroyoshi

PY - 2011

Y1 - 2011

N2 - We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C8-BTBT films exhibit high maximum field-effect mobility of 4.1 cm2/Vs and low average threshold voltage of -7.0 V.

AB - We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C8-BTBT films exhibit high maximum field-effect mobility of 4.1 cm2/Vs and low average threshold voltage of -7.0 V.

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M3 - Conference contribution

AN - SCOPUS:84870678279

SN - 9781622761906

T3 - Proceedings of the International Display Workshops

SP - 85

EP - 88

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

T2 - 18th International Display Workshops 2011, IDW 2011

Y2 - 7 December 2011 through 9 December 2011

ER -