High-index fluoride materials for 193 nm immersion lithography

Teruhiko Nawata; Yoji Inui; Isao Masada; Eiichi Nishijima; Toshiro Mabuchi; Naoto Mochizuki; Hiroki Satoh; Tsuguo Fukuda

doi:10.1117/12.711045

High-index fluoride materials for 193 nm immersion lithography

Teruhiko Nawata, Yoji Inui, Isao Masada, Eiichi Nishijima, Toshiro Mabuchi, Naoto Mochizuki, Hiroki Satoh, Tsuguo Fukuda

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

BaLiF₃ single crystal has been studied as the lens material for the candidate of the next generation high index immersion lithography system. Although the refractive index of BaLiF₃ is 1.64 at 193nm which is not sufficient for the requirement, other optical properties such as 193nm transparency and laser durability might fulfill the requirement, and intrinsic birefringence is relatively lower than other candidate materials. It is estimated that the cause of scattering in the BaLiF₃ crystal is aggregation of excess LiF component. The special annealing process to eliminate excess LiF component was applied to improve the transparency. The internal transparency was improved to more than 97%/cm by optimizing growth conditions and annealing conditions.

Original language	English
Title of host publication	Optical Microlithography XX
Edition	PART 2
DOIs	https://doi.org/10.1117/12.711045
Publication status	Published - 2007
Event	Optical Microlithography XX - San Jose, CA, United States Duration: 2007 Feb 27 → 2007 Mar 2

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Number	PART 2
Volume	6520
ISSN (Print)	0277-786X

Conference

Conference	Optical Microlithography XX
Country/Territory	United States
City	San Jose, CA
Period	07/2/27 → 07/3/2

Keywords

BaLiF
Czochralski
High index
Immersion lithography
Single crystal

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10.1117/12.711045

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title = "High-index fluoride materials for 193 nm immersion lithography",

abstract = "BaLiF3 single crystal has been studied as the lens material for the candidate of the next generation high index immersion lithography system. Although the refractive index of BaLiF3 is 1.64 at 193nm which is not sufficient for the requirement, other optical properties such as 193nm transparency and laser durability might fulfill the requirement, and intrinsic birefringence is relatively lower than other candidate materials. It is estimated that the cause of scattering in the BaLiF3 crystal is aggregation of excess LiF component. The special annealing process to eliminate excess LiF component was applied to improve the transparency. The internal transparency was improved to more than 97%/cm by optimizing growth conditions and annealing conditions.",

keywords = "BaLiF, Czochralski, High index, Immersion lithography, Single crystal",

author = "Teruhiko Nawata and Yoji Inui and Isao Masada and Eiichi Nishijima and Toshiro Mabuchi and Naoto Mochizuki and Hiroki Satoh and Tsuguo Fukuda",

year = "2007",

doi = "10.1117/12.711045",

language = "English",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Optical Microlithography XX ; Conference date: 27-02-2007 Through 02-03-2007",

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Nawata, T, Inui, Y, Masada, I, Nishijima, E, Mabuchi, T, Mochizuki, N, Satoh, H & Fukuda, T 2007, High-index fluoride materials for 193 nm immersion lithography. in Optical Microlithography XX. PART 2 edn, 65201P, Proceedings of SPIE - The International Society for Optical Engineering, no. PART 2, vol. 6520, Optical Microlithography XX, San Jose, CA, United States, 07/2/27. https://doi.org/10.1117/12.711045

High-index fluoride materials for 193 nm immersion lithography. / Nawata, Teruhiko; Inui, Yoji; Masada, Isao et al.
Optical Microlithography XX. PART 2. ed. 2007. 65201P (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6520, No. PART 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - High-index fluoride materials for 193 nm immersion lithography

AU - Nawata, Teruhiko

AU - Inui, Yoji

AU - Masada, Isao

AU - Nishijima, Eiichi

AU - Mabuchi, Toshiro

AU - Mochizuki, Naoto

AU - Satoh, Hiroki

AU - Fukuda, Tsuguo

PY - 2007

Y1 - 2007

N2 - BaLiF3 single crystal has been studied as the lens material for the candidate of the next generation high index immersion lithography system. Although the refractive index of BaLiF3 is 1.64 at 193nm which is not sufficient for the requirement, other optical properties such as 193nm transparency and laser durability might fulfill the requirement, and intrinsic birefringence is relatively lower than other candidate materials. It is estimated that the cause of scattering in the BaLiF3 crystal is aggregation of excess LiF component. The special annealing process to eliminate excess LiF component was applied to improve the transparency. The internal transparency was improved to more than 97%/cm by optimizing growth conditions and annealing conditions.

AB - BaLiF3 single crystal has been studied as the lens material for the candidate of the next generation high index immersion lithography system. Although the refractive index of BaLiF3 is 1.64 at 193nm which is not sufficient for the requirement, other optical properties such as 193nm transparency and laser durability might fulfill the requirement, and intrinsic birefringence is relatively lower than other candidate materials. It is estimated that the cause of scattering in the BaLiF3 crystal is aggregation of excess LiF component. The special annealing process to eliminate excess LiF component was applied to improve the transparency. The internal transparency was improved to more than 97%/cm by optimizing growth conditions and annealing conditions.

KW - BaLiF

KW - Czochralski

KW - High index

KW - Immersion lithography

KW - Single crystal

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High-index fluoride materials for 193 nm immersion lithography

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