High insulating quality Ca F2 pseudomorphic films on Si(111)

N. S. Sokolov, A. K. Kaveev, A. V. Krupin, S. E. Tyaginov, M. I. Vexler, S. Ikeda, K. Tsutsui, K. Saiki

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Current-voltage characteristics of epitaxially grown AuCa F2 Si (111) metal-insulator-semiconductor structures with thin (1.5-6 nm) pseudomorphic fluoride layer have been studied. It was found that Ca F2 films in these structures are of better insulating quality than those in the devices reported previously. Typical breakdown field for the fluorite layers was about 8× 106 Vcm and the tunnel current did not exceed the values predicted by simulations with realistic parameters.

Original languageEnglish
Article number142909
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2007


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