@article{6418eb00c0de43829d2f7b5fd9375397,
title = "High insulating quality Ca F2 pseudomorphic films on Si(111)",
abstract = "Current-voltage characteristics of epitaxially grown AuCa F2 Si (111) metal-insulator-semiconductor structures with thin (1.5-6 nm) pseudomorphic fluoride layer have been studied. It was found that Ca F2 films in these structures are of better insulating quality than those in the devices reported previously. Typical breakdown field for the fluorite layers was about 8× 106 Vcm and the tunnel current did not exceed the values predicted by simulations with realistic parameters.",
author = "Sokolov, {N. S.} and Kaveev, {A. K.} and Krupin, {A. V.} and Tyaginov, {S. E.} and Vexler, {M. I.} and S. Ikeda and K. Tsutsui and K. Saiki",
note = "Funding Information: The authors are indebted to Sergey Suturin for useful discussions and help in AFM measurements. The team from Ioffe Institute greatly acknowledges the support of Russian Foundation for Basic Research (Grant Nos. 05-02-17827 and 07-02-00900) as well as by the Program of Russian Academy of Sciences “New materials.” This research was partly supported by a Grant-in-Aid for Scientific Research (14GS0207) from MEXT, Japan. One of the authors (N.S.S.) appreciates good conditions for work provided by the University of Tokyo during his stay in Kashiwa in 2006.",
year = "2007",
doi = "10.1063/1.2719610",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "14",
}