High integrity SiO 2 gate insulator formed by microwave-excited plasma enhanced chemical vapor deposition for algan/gan hybrid metal-oxide-semiconductor heterojunction field-effect transistor on si substrate

Hiroshi Kambayashi, Takehiko Nomura, Sadahiro Kato, Hirokazu Ueda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

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