High integrity SiO2/Al2O3 gate stack for normally-off GaN MOSFET

Hiroshi Kambayashi; Takehiko Nomura; Hirokazu Ueda; Katsushige Harada; Yuichiro Morozumi; Kazuhide Hasebe; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1557/opl.2013.822

High integrity SiO₂/Al₂O₃ gate stack for normally-off GaN MOSFET

Hiroshi Kambayashi, Takehiko Nomura, Hirokazu Ueda, Katsushige Harada, Yuichiro Morozumi, Kazuhide Hasebe, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

High integrity SiO₂/Al₂O₃ gate stack has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistors. The SiO₂ film formed on GaN by the microwave-excited plasma enhanced chemical vapor deposition (MW-PECVD) exhibits good properties compared that by the LP (Low Pressure)-CVD. Then, by incorporating the advantages of both of SiO₂ with a high insulating and Al₂O₃ with good interface characteristics, the SiO₂/Al₂O₃ gate stack structure has been employed in GaN MOS devices. The structure shows a low interface state density between gate insulator and GaN, a high breakdown field, and a large charge-to-breakdown by applying 3-nm Al₂O₃. The SiO₂/Al₂O₃ gate stack has also been applied to AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET) and the HFET shows excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 192 cm²/Vs.

Original language	English
Title of host publication	Gate Stack Technology for End-of-Roadmap Devices in Logic, Power and Memory
Publisher	Materials Research Society
Pages	7-12
Number of pages	6
ISBN (Print)	9781632661432
DOIs	https://doi.org/10.1557/opl.2013.822
Publication status	Published - 2013
Event	2013 MRS Spring Meeting - San Francisco, CA, United States Duration: 2013 Apr 1 → 2013 Apr 5

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1561
ISSN (Print)	0272-9172

Conference

Conference	2013 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	13/4/1 → 13/4/5

Access to Document

10.1557/opl.2013.822

Cite this

Kambayashi, H., Nomura, T., Ueda, H., Harada, K., Morozumi, Y., Hasebe, K., Teramoto, A., Sugawa, S., & Ohmi, T. (2013). High integrity SiO₂/Al₂O₃ gate stack for normally-off GaN MOSFET. In Gate Stack Technology for End-of-Roadmap Devices in Logic, Power and Memory (pp. 7-12). (Materials Research Society Symposium Proceedings; Vol. 1561). Materials Research Society. https://doi.org/10.1557/opl.2013.822

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title = "High integrity SiO2/Al2O3 gate stack for normally-off GaN MOSFET",

abstract = "High integrity SiO2/Al2O3 gate stack has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistors. The SiO2 film formed on GaN by the microwave-excited plasma enhanced chemical vapor deposition (MW-PECVD) exhibits good properties compared that by the LP (Low Pressure)-CVD. Then, by incorporating the advantages of both of SiO2 with a high insulating and Al2O3 with good interface characteristics, the SiO2/Al2O3 gate stack structure has been employed in GaN MOS devices. The structure shows a low interface state density between gate insulator and GaN, a high breakdown field, and a large charge-to-breakdown by applying 3-nm Al2O3. The SiO2/Al2O3 gate stack has also been applied to AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET) and the HFET shows excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 192 cm2/Vs.",

author = "Hiroshi Kambayashi and Takehiko Nomura and Hirokazu Ueda and Katsushige Harada and Yuichiro Morozumi and Kazuhide Hasebe and Akinobu Teramoto and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2013",

doi = "10.1557/opl.2013.822",

language = "English",

isbn = "9781632661432",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "7--12",

booktitle = "Gate Stack Technology for End-of-Roadmap Devices in Logic, Power and Memory",

note = "2013 MRS Spring Meeting ; Conference date: 01-04-2013 Through 05-04-2013",

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Kambayashi, H, Nomura, T, Ueda, H, Harada, K, Morozumi, Y, Hasebe, K, Teramoto, A, Sugawa, S & Ohmi, T 2013, High integrity SiO₂/Al₂O₃ gate stack for normally-off GaN MOSFET. in Gate Stack Technology for End-of-Roadmap Devices in Logic, Power and Memory. Materials Research Society Symposium Proceedings, vol. 1561, Materials Research Society, pp. 7-12, 2013 MRS Spring Meeting, San Francisco, CA, United States, 13/4/1. https://doi.org/10.1557/opl.2013.822

High integrity SiO₂/Al₂O₃ gate stack for normally-off GaN MOSFET. / Kambayashi, Hiroshi; Nomura, Takehiko; Ueda, Hirokazu et al.
Gate Stack Technology for End-of-Roadmap Devices in Logic, Power and Memory. Materials Research Society, 2013. p. 7-12 (Materials Research Society Symposium Proceedings; Vol. 1561).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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