TY - JOUR
T1 - High level oscillations with narrow linewidth in magnetic nano-contact spin torque oscillator with synthetic AF spin-valve structure
AU - Endo, Hiroaki
AU - Tanaka, Toshiyuki
AU - Doi, Masaaki
AU - Hashimoto, Susumu
AU - Fuke, Hiromi Niu
AU - Iwasaki, Hitoshi
AU - Sahashi, Masashi
N1 - Funding Information:
ACKNOWLEDGMENT The authors would like to thank Dr. Imamura, Dr. Matsushita (AIST) and Dr. Seki (Osaka University) for beneficial discussions. This work was supported in part by NEDO Grant, and in part by a Grant-in-Aid for Grant-in-Aid for JSPS Fellows.
PY - 2009/10
Y1 - 2009/10
N2 - We investigated the current induced magnetization dynamics, so called spin torque oscillation, in magnetic nano-contact MR element with a synthetic antiferromagnetic type spin-valve structure under high in-plane applied magnetic field of 0.9-1 kOe. Very high level oscillation of 18 nVHz-1/2 with narrow FWHM of 12 MHz was observed in the condition of negative applied current where electron-spin is injected from free layer to reference one. Applied current dependency on an oscillation frequency is a blueshift with good linearlity, and same dependency on level and FWHM is almost constant in the range of-10 to-14 mA, while applied field dependency on frequency shows redshift with two different slopes, -2.5 MHz/Oe in less than 1 kOe and-8.7 MHz/Oe in more than 1 kOe which field is smaller than the spin-flop field for the synthetic antiferromagnet, besides very clear and reasonable peak and bottom for oscillation level and FWHM are observed, respectively. It is thought that these magnetization dynamics are originated from synthetic antiferromagnet.
AB - We investigated the current induced magnetization dynamics, so called spin torque oscillation, in magnetic nano-contact MR element with a synthetic antiferromagnetic type spin-valve structure under high in-plane applied magnetic field of 0.9-1 kOe. Very high level oscillation of 18 nVHz-1/2 with narrow FWHM of 12 MHz was observed in the condition of negative applied current where electron-spin is injected from free layer to reference one. Applied current dependency on an oscillation frequency is a blueshift with good linearlity, and same dependency on level and FWHM is almost constant in the range of-10 to-14 mA, while applied field dependency on frequency shows redshift with two different slopes, -2.5 MHz/Oe in less than 1 kOe and-8.7 MHz/Oe in more than 1 kOe which field is smaller than the spin-flop field for the synthetic antiferromagnet, besides very clear and reasonable peak and bottom for oscillation level and FWHM are observed, respectively. It is thought that these magnetization dynamics are originated from synthetic antiferromagnet.
KW - Index Terms-Magnetic nano-contact magnetoresistance
KW - Magnetization dynamics
KW - Microwave oscillation
KW - Spin transfer torque
KW - Synthetic antiferromagnet
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U2 - 10.1109/TMAG.2009.2023851
DO - 10.1109/TMAG.2009.2023851
M3 - Article
AN - SCOPUS:70350592373
SN - 0018-9464
VL - 45
SP - 3418
EP - 3421
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 10
M1 - 5257221
ER -