High-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes

Xiu Feng Han, Tadaomi Daibou, Makoto Kamijo, Kazuya Yaoita, Hitoshi Kubota, Yasuo Ando, Terunobu Miyazaki

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30 Citations (Scopus)


Tunnel magnetoresistance (TMR) effect and the applied voltage dependence of the TMR ratio in the tunnel junctions Ta(5 nm)/Ni79Fe21(3 nm)/Cu(20 nm)/Ni79Fe21(3 nm)/Ir22Mn78(10 nm)/Co75Fe25(4 nm)/Al(0.8 nm)-oxide/Co75Fe25(4 nm)/Ni79Fe21(20 nm)/Ta(5 nm) were investigated. MR ratio, effective barrier height and width, and breakdown voltage of the junctions can be remarkably enhanced after annealed at 300 °C for an hour using Co75Fe25 as ferromagnetic electrodes and Cu as bottom conduction electrode. High MR ratio of 49.7% at room temperature and 69.1% at 4.2 K for the TMR junctions were observed.

Original languageEnglish
Pages (from-to)L439-L441
JournalJapanese Journal of Applied Physics
Issue number5 B
Publication statusPublished - 2000


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