TY - JOUR
T1 - High melting point metal (Pt, W) seed layer for grain size refinement of FePt-based heat-assisted magnetic recording media
AU - Wang, Jian
AU - Liu, Dong
AU - Suzuki, Ippei
AU - Takahashi, Yukiko
AU - Yan, Mi
AU - Hono, Kazuhiro
N1 - Funding Information:
Acknowledgments This work was supported in part by IDEMA-ASTC, KAKENHI Grant-in-Aid (B) (Grant No. 18H03787) and the Sasakawa Scientific Research Grant from The Japan Science Society. JW acknowledges NIMS for its provisioning of the ICYS fellowship.
Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/2
Y1 - 2019/2
N2 - Refinement of the FePt grain size for heat-assisted magnetic recording (HAMR) media was explored by utilizing high melting point metals Pt and W as seed layers. Unlike the W, the Pt seed layer promotes a good epitaxial growth and leads to a higher degree of L10-ordering in FePt films. It also substantially refines the FePt grains from big islands into smaller particles. For the FePt-C nanogranular film, the Pt seed layer improves the wettability and favors a single-columnar growth. Thus, the Pt seed layer provides a new valid approach to optimize the microstructure and magnetic properties for next-generation FePt-based HAMR media.
AB - Refinement of the FePt grain size for heat-assisted magnetic recording (HAMR) media was explored by utilizing high melting point metals Pt and W as seed layers. Unlike the W, the Pt seed layer promotes a good epitaxial growth and leads to a higher degree of L10-ordering in FePt films. It also substantially refines the FePt grains from big islands into smaller particles. For the FePt-C nanogranular film, the Pt seed layer improves the wettability and favors a single-columnar growth. Thus, the Pt seed layer provides a new valid approach to optimize the microstructure and magnetic properties for next-generation FePt-based HAMR media.
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U2 - 10.7567/1882-0786/aafca3
DO - 10.7567/1882-0786/aafca3
M3 - Article
AN - SCOPUS:85062262008
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 2
M1 - 023007
ER -