HIGH MOBILITY MODULATION-DOPED Ga//0//. //4//7In//0//. //5//3As/Al//0//. //4//8In//0//. //5//2As HETEROSTRUCTURES FOR MESFET'S.

K. H. Hsieh, P. M. Capani, H. Ohno, G. Wicks, A. R. Calawa, L. F. Eastman

Research output: Contribution to conference › Paper › peer-review

ASJC Scopus subject areas

@conference{e2b23798dc2c4940a0252f6ccefd576b,

title = "HIGH MOBILITY MODULATION-DOPED Ga//0//. //4//7In//0//. //5//3As/Al//0//. //4//8In//0//. //5//2As HETEROSTRUCTURES FOR MESFET'S.",

author = "Hsieh, {K. H.} and Capani, {P. M.} and H. Ohno and G. Wicks and Calawa, {A. R.} and Eastman, {L. F.}",

year = "1984",

month = jan,

day = "1",

language = "English",

pages = "194--203",

}

TY - CONF

T1 - HIGH MOBILITY MODULATION-DOPED Ga//0//. //4//7In//0//. //5//3As/Al//0//. //4//8In//0//. //5//2As HETEROSTRUCTURES FOR MESFET'S.

AU - Hsieh, K. H.

AU - Capani, P. M.

AU - Ohno, H.

AU - Wicks, G.

AU - Calawa, A. R.

AU - Eastman, L. F.

PY - 1984/1/1

Y1 - 1984/1/1

UR - http://www.scopus.com/inward/record.url?scp=0021314880&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021314880&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0021314880

SP - 194

EP - 203

ER -