High mobility organic thin-film transistors on plastic substrate

Iori Doi, Myeong Jin Kang, Kazuo Takimiya

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


We have fabricated organic thin-film transistors (OTFTs) based on di-n-decyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C 10-DNTT) on a polyimide gate dielectric coated on a polycarbonate substrate with a bottom-gate, top-contact configuration. Mobilities of the C10-DNTT-based TFTs were as high as 2.4 cm2 V-1 s-1, which are much better than those of the parent dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)-based TFTs (mobility ∼ 0.5 cm2/V) fabricated on the same substrate. Compared to the C10-DNTT-TFTs on the conventional Si/SiO2 substrate, the present mobility of C10-DNTT-TFTs are somewhat reduced, which can be attributed to reduced crystallinity on the polyimide gate dielectric, although the crystalline phase on the polyimide is the same as on the Si/SiO2 substrate.

Original languageEnglish
Pages (from-to)e2
JournalCurrent Applied Physics
Issue numberSUPPL. 1
Publication statusPublished - 2012 Sept
Externally publishedYes


  • Flexible plastic substrate
  • High mobility
  • Organic thin film transistor
  • Polyimide gate dielectric

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)


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