TY - JOUR
T1 - High mobility organic thin-film transistors on plastic substrate
AU - Doi, Iori
AU - Kang, Myeong Jin
AU - Takimiya, Kazuo
N1 - Funding Information:
This work was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology , Japan (No. 20350088 ) and NEDO Nanotech Challenge Program . We also thank Teijin Ltd. for supplying the PC/IZO substrates.
PY - 2012/9
Y1 - 2012/9
N2 - We have fabricated organic thin-film transistors (OTFTs) based on di-n-decyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C 10-DNTT) on a polyimide gate dielectric coated on a polycarbonate substrate with a bottom-gate, top-contact configuration. Mobilities of the C10-DNTT-based TFTs were as high as 2.4 cm2 V-1 s-1, which are much better than those of the parent dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)-based TFTs (mobility ∼ 0.5 cm2/V) fabricated on the same substrate. Compared to the C10-DNTT-TFTs on the conventional Si/SiO2 substrate, the present mobility of C10-DNTT-TFTs are somewhat reduced, which can be attributed to reduced crystallinity on the polyimide gate dielectric, although the crystalline phase on the polyimide is the same as on the Si/SiO2 substrate.
AB - We have fabricated organic thin-film transistors (OTFTs) based on di-n-decyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C 10-DNTT) on a polyimide gate dielectric coated on a polycarbonate substrate with a bottom-gate, top-contact configuration. Mobilities of the C10-DNTT-based TFTs were as high as 2.4 cm2 V-1 s-1, which are much better than those of the parent dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)-based TFTs (mobility ∼ 0.5 cm2/V) fabricated on the same substrate. Compared to the C10-DNTT-TFTs on the conventional Si/SiO2 substrate, the present mobility of C10-DNTT-TFTs are somewhat reduced, which can be attributed to reduced crystallinity on the polyimide gate dielectric, although the crystalline phase on the polyimide is the same as on the Si/SiO2 substrate.
KW - Flexible plastic substrate
KW - High mobility
KW - Organic thin film transistor
KW - Polyimide gate dielectric
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U2 - 10.1016/j.cap.2011.09.011
DO - 10.1016/j.cap.2011.09.011
M3 - Article
AN - SCOPUS:84862836996
SN - 1567-1739
VL - 12
SP - e2
JO - Current Applied Physics
JF - Current Applied Physics
IS - SUPPL. 1
ER -