High mobility thin film transistors with transparent ZnO channels

Junya Nishii, Faruque M. Hossain, Shingo Takagi, Tetsuya Aita, Koji Saikusa, Yuji Ohmaki, Isao Ohkubo, Shuya Kishimoto, Akira Ohtomo, Tomoteru Fukumura, Fumihiro Matsukura, Yuzo Ohno, Hideomi Koinuma, Hideo Ohno, Masashi Kawasaki

Research output: Contribution to journalLetterpeer-review

301 Citations (Scopus)


We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfOx, buffer layer between ZnO channel and amorphous silicon-nitride gate insulator. The TFT structure, dimensions, and materials set are identical to those of the commercial amorphous silicon (a-Si) TFTs in active matrix liquid crystal display, except for the channel and buffer layers replacing a-Si. The field effect mobility can be as high as 7 cm2·V-1·s-1 for devices with maximum process temperature of 300°C. The process temperature can be reduced to 150°C without much degrading the performance, showing the possibility of the use of polymer substrate.

Original languageEnglish
Pages (from-to)L347-L349
JournalJapanese Journal of Applied Physics
Issue number4 A
Publication statusPublished - 2003 Apr 1


  • CaHfO
  • Field effect mobility
  • Pulsed laser deposition
  • TFT
  • ZnO


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