TY - JOUR
T1 - High-mobility two-dimensional electron gas in an undoped heterostructure
T2 - Mobility enhancement after illumination
AU - Saku, Tadashi
AU - Muraki, Koji
AU - Hirayama, Yoshiro
PY - 1998/7/1
Y1 - 1998/7/1
N2 - High-mobility two-dimensional electron gas (2DEG) is formed at an undoped GaAs/AlGaAs inverted heterointerface through the field-effect using a back-gate. Despite the structure being undoped, mobility enhancement is observed at 1.6 K after illumination. This suggests effective reduction of background impurity scattering by illumination. The maximum mobility reached after illumination, 5×106cm2/V·s, is the highest value ever reported for gated undoped heterostructures, including both normal- and inverted-type structures. This mobility is also the highest ever reported for inverted GaAs/AlGaAs heterostructures.
AB - High-mobility two-dimensional electron gas (2DEG) is formed at an undoped GaAs/AlGaAs inverted heterointerface through the field-effect using a back-gate. Despite the structure being undoped, mobility enhancement is observed at 1.6 K after illumination. This suggests effective reduction of background impurity scattering by illumination. The maximum mobility reached after illumination, 5×106cm2/V·s, is the highest value ever reported for gated undoped heterostructures, including both normal- and inverted-type structures. This mobility is also the highest ever reported for inverted GaAs/AlGaAs heterostructures.
KW - AlGaAs
KW - Field-effect
KW - GaAs
KW - High mobility
KW - Inverted heterostructure
KW - Two-dimensional electron gas
KW - Undoped
UR - http://www.scopus.com/inward/record.url?scp=0032120697&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032120697&partnerID=8YFLogxK
U2 - 10.1143/jjap.37.l765
DO - 10.1143/jjap.37.l765
M3 - Article
AN - SCOPUS:0032120697
SN - 0021-4922
VL - 37
SP - L765-L767
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 7 PART A
ER -