TY - JOUR
T1 - High-output-power deep ultraviolet light-emitting diode assembly using direct bonding
AU - Ichikawa, Masatsugu
AU - Fujioka, Akira
AU - Kosugi, Takao
AU - Endo, Shinya
AU - Sagawa, Harunobu
AU - Tamaki, Hiroto
AU - Mukai, Takashi
AU - Uomoto, Miyuki
AU - Shimatsu, Takehito
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/7
Y1 - 2016/7
N2 - We fabricated high-output-power 255 and 280nm light-emitting diodes (LEDs) using direct bonding. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface-activated bonding. The LEDs with lenses had a higher light extraction efficiency than conventionally structured LEDs. As a result, at a forward current of 350 mA, the output power of the 255nm LED increased by a factor of 2.8, reaching 73.6mW, while that of the 280nm LED increased by a factor of 2.3, reaching 153mW.
AB - We fabricated high-output-power 255 and 280nm light-emitting diodes (LEDs) using direct bonding. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface-activated bonding. The LEDs with lenses had a higher light extraction efficiency than conventionally structured LEDs. As a result, at a forward current of 350 mA, the output power of the 255nm LED increased by a factor of 2.8, reaching 73.6mW, while that of the 280nm LED increased by a factor of 2.3, reaching 153mW.
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U2 - 10.7567/APEX.9.072101
DO - 10.7567/APEX.9.072101
M3 - Article
AN - SCOPUS:84978414726
SN - 1882-0778
VL - 9
JO - Applied Physics Express
JF - Applied Physics Express
IS - 7
M1 - 072101
ER -