High performance λ/4 shifted MQW-DFB-DC-PBH-LDs and InGaAs dual PIN-PDs for Gbps coherent optical communication systems

Mitsuhiro Kitamura; Kenkoh Taguchi; Hiroyuki Yamazaki; Hirohito Yamada; Tsuyoshi Takeuchi; Shinji Takano; Kazuhiro Kosuge; Yuko Sugiyama; Ikuo Mito

High performance λ/4 shifted MQW-DFB-DC-PBH-LDs and InGaAs dual PIN-PDs for Gbps coherent optical communication systems

Mitsuhiro Kitamura, Kenkoh Taguchi, Hiroyuki Yamazaki, Hirohito Yamada, Tsuyoshi Takeuchi, Shinji Takano, Kazuhiro Kosuge, Yuko Sugiyama, Ikuo Mito

ENG - Communications Engineering

CNRS

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

The authors demonstrate high performance single frequency quarter wave (λ/4) shifted Multiple-Quantum-Well Distributed Feedback Laser Diodes with Double Channel Planar Buried Heterostructure (MQW-DFB-DC-PBH-LDs) and InGaAs dual PIN-PDs. For MQW-DFB -DC-PBH-LDs, superior characteristics, such as narrow spectral linewidth and flat FM response at high light output power, have been obtained with small values of coupling coefficient and cavity length product (κL), and thick Separate Confinement Heterostructure (SCH) layers. For dual PIN-PDs, over 10 GHz high-speed response for up to 10 mW high input power condition has been obtained, for front-illuminated configuration. An estimated lifetime of over 10⁵ hours has been obtained for both LDs and dual PIN-PDs, demonstrating that these devices are suitable for practical use in Gbps coherent optical fiber communication systems.

Original language	English
Title of host publication	NEC Research and Development
Pages	340-353
Number of pages	14
Volume	33
Edition	3
Publication status	Published - 1992 Jul

Cite this

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title = "High performance λ/4 shifted MQW-DFB-DC-PBH-LDs and InGaAs dual PIN-PDs for Gbps coherent optical communication systems",

abstract = "The authors demonstrate high performance single frequency quarter wave (λ/4) shifted Multiple-Quantum-Well Distributed Feedback Laser Diodes with Double Channel Planar Buried Heterostructure (MQW-DFB-DC-PBH-LDs) and InGaAs dual PIN-PDs. For MQW-DFB -DC-PBH-LDs, superior characteristics, such as narrow spectral linewidth and flat FM response at high light output power, have been obtained with small values of coupling coefficient and cavity length product (κL), and thick Separate Confinement Heterostructure (SCH) layers. For dual PIN-PDs, over 10 GHz high-speed response for up to 10 mW high input power condition has been obtained, for front-illuminated configuration. An estimated lifetime of over 105 hours has been obtained for both LDs and dual PIN-PDs, demonstrating that these devices are suitable for practical use in Gbps coherent optical fiber communication systems.",

author = "Mitsuhiro Kitamura and Kenkoh Taguchi and Hiroyuki Yamazaki and Hirohito Yamada and Tsuyoshi Takeuchi and Shinji Takano and Kazuhiro Kosuge and Yuko Sugiyama and Ikuo Mito",

year = "1992",

month = jul,

language = "English",

volume = "33",

pages = "340--353",

booktitle = "NEC Research and Development",

edition = "3",

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TY - CHAP

T1 - High performance λ/4 shifted MQW-DFB-DC-PBH-LDs and InGaAs dual PIN-PDs for Gbps coherent optical communication systems

AU - Kitamura, Mitsuhiro

AU - Taguchi, Kenkoh

AU - Yamazaki, Hiroyuki

AU - Yamada, Hirohito

AU - Takeuchi, Tsuyoshi

AU - Takano, Shinji

AU - Kosuge, Kazuhiro

AU - Sugiyama, Yuko

AU - Mito, Ikuo

PY - 1992/7

Y1 - 1992/7

N2 - The authors demonstrate high performance single frequency quarter wave (λ/4) shifted Multiple-Quantum-Well Distributed Feedback Laser Diodes with Double Channel Planar Buried Heterostructure (MQW-DFB-DC-PBH-LDs) and InGaAs dual PIN-PDs. For MQW-DFB -DC-PBH-LDs, superior characteristics, such as narrow spectral linewidth and flat FM response at high light output power, have been obtained with small values of coupling coefficient and cavity length product (κL), and thick Separate Confinement Heterostructure (SCH) layers. For dual PIN-PDs, over 10 GHz high-speed response for up to 10 mW high input power condition has been obtained, for front-illuminated configuration. An estimated lifetime of over 105 hours has been obtained for both LDs and dual PIN-PDs, demonstrating that these devices are suitable for practical use in Gbps coherent optical fiber communication systems.

AB - The authors demonstrate high performance single frequency quarter wave (λ/4) shifted Multiple-Quantum-Well Distributed Feedback Laser Diodes with Double Channel Planar Buried Heterostructure (MQW-DFB-DC-PBH-LDs) and InGaAs dual PIN-PDs. For MQW-DFB -DC-PBH-LDs, superior characteristics, such as narrow spectral linewidth and flat FM response at high light output power, have been obtained with small values of coupling coefficient and cavity length product (κL), and thick Separate Confinement Heterostructure (SCH) layers. For dual PIN-PDs, over 10 GHz high-speed response for up to 10 mW high input power condition has been obtained, for front-illuminated configuration. An estimated lifetime of over 105 hours has been obtained for both LDs and dual PIN-PDs, demonstrating that these devices are suitable for practical use in Gbps coherent optical fiber communication systems.

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UR - http://www.scopus.com/inward/citedby.url?scp=0026887319&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0026887319

VL - 33

SP - 340

EP - 353

BT - NEC Research and Development

ER -

High performance λ/4 shifted MQW-DFB-DC-PBH-LDs and InGaAs dual PIN-PDs for Gbps coherent optical communication systems

Abstract

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