High performance bottom gate μc-Si TFT fabricated by low damage, high density plasma source

A. Hiroe; M. Hirayama; Y. Shirai; A. Teramoto; T. Ohmi

High performance bottom gate μc-Si TFT fabricated by low damage, high density plasma source

A. Hiroe, M. Hirayama, Y. Shirai, A. Teramoto, T. Ohmi

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

Low damage and high density microwave (2.45GHz) plasma source called CMEP (Cellular Microwave Excited Plasma) has been developed. Uniform and large area microwave plasma is realized by this plasma, source. Investigation of μc-Si deposition trend and fabrication of bottom gate TFT have been done using microwave plasma CVD. Hydrogen plasma post-treatment has been found to be important for improving the TFT characteristics. Mobility of about 1.4cm ²/Vsec and on/off ratio of more than 10⁵ is achieved after hydrogen plasma treatment.

Original language	English
Pages	503-506
Number of pages	4
Publication status	Published - 2007
Event	14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 2007 Dec 5 → 2007 Dec 5

Conference

Conference	14th International Display Workshops, IDW '07
Country/Territory	Japan
City	Sapporo
Period	07/12/5 → 07/12/5

Cite this

@conference{4062a91180b547499545cbbdc306af1d,

title = "High performance bottom gate μc-Si TFT fabricated by low damage, high density plasma source",

abstract = "Low damage and high density microwave (2.45GHz) plasma source called CMEP (Cellular Microwave Excited Plasma) has been developed. Uniform and large area microwave plasma is realized by this plasma, source. Investigation of μc-Si deposition trend and fabrication of bottom gate TFT have been done using microwave plasma CVD. Hydrogen plasma post-treatment has been found to be important for improving the TFT characteristics. Mobility of about 1.4cm 2/Vsec and on/off ratio of more than 105 is achieved after hydrogen plasma treatment.",

author = "A. Hiroe and M. Hirayama and Y. Shirai and A. Teramoto and T. Ohmi",

year = "2007",

language = "English",

pages = "503--506",

note = "14th International Display Workshops, IDW '07 ; Conference date: 05-12-2007 Through 05-12-2007",

}

TY - CONF

T1 - High performance bottom gate μc-Si TFT fabricated by low damage, high density plasma source

AU - Hiroe, A.

AU - Hirayama, M.

AU - Shirai, Y.

AU - Teramoto, A.

AU - Ohmi, T.

PY - 2007

Y1 - 2007

N2 - Low damage and high density microwave (2.45GHz) plasma source called CMEP (Cellular Microwave Excited Plasma) has been developed. Uniform and large area microwave plasma is realized by this plasma, source. Investigation of μc-Si deposition trend and fabrication of bottom gate TFT have been done using microwave plasma CVD. Hydrogen plasma post-treatment has been found to be important for improving the TFT characteristics. Mobility of about 1.4cm 2/Vsec and on/off ratio of more than 105 is achieved after hydrogen plasma treatment.

AB - Low damage and high density microwave (2.45GHz) plasma source called CMEP (Cellular Microwave Excited Plasma) has been developed. Uniform and large area microwave plasma is realized by this plasma, source. Investigation of μc-Si deposition trend and fabrication of bottom gate TFT have been done using microwave plasma CVD. Hydrogen plasma post-treatment has been found to be important for improving the TFT characteristics. Mobility of about 1.4cm 2/Vsec and on/off ratio of more than 105 is achieved after hydrogen plasma treatment.

UR - http://www.scopus.com/inward/record.url?scp=43349106754&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43349106754&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:43349106754

SP - 503

EP - 506

T2 - 14th International Display Workshops, IDW '07

Y2 - 5 December 2007 through 5 December 2007

ER -

High performance bottom gate μc-Si TFT fabricated by low damage, high density plasma source

Abstract

Conference

Other files and links

Fingerprint

Cite this