Low damage and high density microwave (2.45GHz) plasma source called CMEP (Cellular Microwave Excited Plasma) has been developed. Uniform and large area microwave plasma is realized by this plasma, source. Investigation of μc-Si deposition trend and fabrication of bottom gate TFT have been done using microwave plasma CVD. Hydrogen plasma post-treatment has been found to be important for improving the TFT characteristics. Mobility of about 1.4cm 2/Vsec and on/off ratio of more than 105 is achieved after hydrogen plasma treatment.
|Number of pages||4|
|Publication status||Published - 2007|
|Event||14th International Display Workshops, IDW '07 - Sapporo, Japan|
Duration: 2007 Dec 5 → 2007 Dec 5
|Conference||14th International Display Workshops, IDW '07|
|Period||07/12/5 → 07/12/5|