High performance CMOS compatible bistable operation at extremely low supply voltage by a novel Si interband tunneling diode

K. Morita; H. Sorada; K. Morimoto; K. Yuki; S. Yoshii; M. Niwa; T. Uenoyama; K. Ohnaka

High performance CMOS compatible bistable operation at extremely low supply voltage by a novel Si interband tunneling diode

K. Morita, H. Sorada, K. Morimoto, K. Yuki, S. Yoshii, M. Niwa, T. Uenoyama, K. Ohnaka

Research output: Contribution to conference › Paper › peer-review

Abstract

A CMOS compatible bistable operation below 0.5V at room temperature is realized by means of a novel interband tunneling diode using Si material. This operation is achieved by the suppression of the current under the forward bias by introducing tunnel oxide. A possibility of multistate memory is demonstrated.

Original language	English
Pages	42-43
Number of pages	2
Publication status	Published - 1998 Dec 1
Externally published	Yes
Event	Proceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA Duration: 1998 Jun 22 → 1998 Jun 24

Other

Other	Proceedings of the 1998 56th Annual Device Research Conference
City	Charlottesville, VA, USA
Period	98/6/22 → 98/6/24

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "High performance CMOS compatible bistable operation at extremely low supply voltage by a novel Si interband tunneling diode",

abstract = "A CMOS compatible bistable operation below 0.5V at room temperature is realized by means of a novel interband tunneling diode using Si material. This operation is achieved by the suppression of the current under the forward bias by introducing tunnel oxide. A possibility of multistate memory is demonstrated.",

author = "K. Morita and H. Sorada and K. Morimoto and K. Yuki and S. Yoshii and M. Niwa and T. Uenoyama and K. Ohnaka",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "42--43",

note = "Proceedings of the 1998 56th Annual Device Research Conference ; Conference date: 22-06-1998 Through 24-06-1998",

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T1 - High performance CMOS compatible bistable operation at extremely low supply voltage by a novel Si interband tunneling diode

AU - Morita, K.

AU - Sorada, H.

AU - Morimoto, K.

AU - Yuki, K.

AU - Yoshii, S.

AU - Niwa, M.

AU - Uenoyama, T.

AU - Ohnaka, K.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - A CMOS compatible bistable operation below 0.5V at room temperature is realized by means of a novel interband tunneling diode using Si material. This operation is achieved by the suppression of the current under the forward bias by introducing tunnel oxide. A possibility of multistate memory is demonstrated.

AB - A CMOS compatible bistable operation below 0.5V at room temperature is realized by means of a novel interband tunneling diode using Si material. This operation is achieved by the suppression of the current under the forward bias by introducing tunnel oxide. A possibility of multistate memory is demonstrated.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032319705&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032319705

SP - 42

EP - 43

T2 - Proceedings of the 1998 56th Annual Device Research Conference

Y2 - 22 June 1998 through 24 June 1998

ER -

High performance CMOS compatible bistable operation at extremely low supply voltage by a novel Si interband tunneling diode

Abstract

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