High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate

Toan Thanh Dao; Thu Viet Tran; Koichi Higashimine; Hiromasa Okada; Derrick Mott; Shinya Maenosono; Hideyuki Murata

doi:10.1063/1.3665937

High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate

Toan Thanh Dao, Thu Viet Tran, Koichi Higashimine, Hiromasa Okada, Derrick Mott, Shinya Maenosono, Hideyuki Murata

IEHE - Division of Research in Higher Education

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

A mixture of ZnO nanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistive memory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of s. The device exhibited an on/off ratio of > 10 ⁴, retention time of > 10 ⁵s, and number of readout of 4 × 10 ⁴ times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths.

Original language	English
Article number	233303
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3665937
Publication status	Published - 2011 Dec 5

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title = "High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate",

abstract = "A mixture of ZnO nanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistive memory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of s. The device exhibited an on/off ratio of > 10 4, retention time of > 10 5s, and number of readout of 4 × 10 4 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths.",

author = "{Thanh Dao}, Toan and {Viet Tran}, Thu and Koichi Higashimine and Hiromasa Okada and Derrick Mott and Shinya Maenosono and Hideyuki Murata",

note = "Funding Information: This work was partially supported by a Grant-in-Aid Grant No. 20241034 and Scientific Research on Innovative Areas “π-Space” Grant No. 20108012 from the Ministry of Education, Culture, Sports, Science, and Technology, Japan. D.T.T. and T.V.T. gratefully acknowledge financial support by 322 Scholarships (doctoral course) of the Vietnamese Government.",

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AU - Thanh Dao, Toan

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AU - Higashimine, Koichi

AU - Okada, Hiromasa

AU - Mott, Derrick

AU - Maenosono, Shinya

AU - Murata, Hideyuki

N1 - Funding Information: This work was partially supported by a Grant-in-Aid Grant No. 20241034 and Scientific Research on Innovative Areas “π-Space” Grant No. 20108012 from the Ministry of Education, Culture, Sports, Science, and Technology, Japan. D.T.T. and T.V.T. gratefully acknowledge financial support by 322 Scholarships (doctoral course) of the Vietnamese Government.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - A mixture of ZnO nanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistive memory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of s. The device exhibited an on/off ratio of > 10 4, retention time of > 10 5s, and number of readout of 4 × 10 4 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths.

AB - A mixture of ZnO nanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistive memory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of s. The device exhibited an on/off ratio of > 10 4, retention time of > 10 5s, and number of readout of 4 × 10 4 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths.

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High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate

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