TY - JOUR
T1 - High-performance organic field-effect transistors based on dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene
AU - Miyata, Yasuo
AU - Yoshikawa, Eiji
AU - Minari, Takeo
AU - Tsukagoshi, Kazuhito
AU - Yamaguchi, Shigehiro
PY - 2012/4/28
Y1 - 2012/4/28
N2 - A novel thienoacene compound, dihexyl-substituted dibenzo[d,d′] thieno[3,2-b;4,5-b′]dithiophene (C6-DBTDT), is developed as a p-type organic semiconductor for high-performance organic field-effect transistors. Insertion of an acceptor material at the contact interface enables substantial reduction in the threshold voltage and hysteresis behavior, and the field-effect mobilities of 2.5 and 3.1 cm 2 V -1 s -1 are achieved for the C6-DBTDT film vacuum-deposited at room temperature and 80 °C, respectively.
AB - A novel thienoacene compound, dihexyl-substituted dibenzo[d,d′] thieno[3,2-b;4,5-b′]dithiophene (C6-DBTDT), is developed as a p-type organic semiconductor for high-performance organic field-effect transistors. Insertion of an acceptor material at the contact interface enables substantial reduction in the threshold voltage and hysteresis behavior, and the field-effect mobilities of 2.5 and 3.1 cm 2 V -1 s -1 are achieved for the C6-DBTDT film vacuum-deposited at room temperature and 80 °C, respectively.
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U2 - 10.1039/c2jm30840a
DO - 10.1039/c2jm30840a
M3 - Article
AN - SCOPUS:84859239616
SN - 0959-9428
VL - 22
SP - 7715
EP - 7717
JO - Journal of Materials Chemistry
JF - Journal of Materials Chemistry
IS - 16
ER -