High-performance organic field-effect transistors based on dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene

Yasuo Miyata, Eiji Yoshikawa, Takeo Minari, Kazuhito Tsukagoshi, Shigehiro Yamaguchi

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


A novel thienoacene compound, dihexyl-substituted dibenzo[d,d′] thieno[3,2-b;4,5-b′]dithiophene (C6-DBTDT), is developed as a p-type organic semiconductor for high-performance organic field-effect transistors. Insertion of an acceptor material at the contact interface enables substantial reduction in the threshold voltage and hysteresis behavior, and the field-effect mobilities of 2.5 and 3.1 cm 2 V -1 s -1 are achieved for the C6-DBTDT film vacuum-deposited at room temperature and 80 °C, respectively.

Original languageEnglish
Pages (from-to)7715-7717
Number of pages3
JournalJournal of Materials Chemistry
Issue number16
Publication statusPublished - 2012 Apr 28
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry


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